Face-to-Face TSV Multi-Die Packaging for Fast Signals and Heat Flow
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Solution Overview
Problem
The miniaturization of semiconductive devices during packaging requires 2D multiple-die footprints, and existing technologies struggle to achieve efficient inter-chip connections and heat management within the constraints of conventional chip-scale packaging norms.
Innovation Solution
The implementation of face-to-face (F2F) through-silicon via (TSV) multi-die apparatus with redistribution layers, allowing for high-speed signal transmission and efficient heat management by clustering TSVs within a single die footprint, and using a heat sink for thermal management, while maintaining a compact package size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional chip-scale packaging is used, then device footprint is reduced, but inter-chip connection efficiency and heat management deteriorate
Solution Approach 1:
The patent transitions from 2D planar packaging to 3D vertical stacking by implementing face-to-face multi-die attachment with through-silicon vias. Multiple dies are stacked vertically and connected through TSVs, enabling high-speed inter-chip connections while maintaining a compact footprint. The redistribution layers are configured in three dimensions to facilitate signal routing between stacked dies, resolving the contradiction between small footprint and connection efficiency.
Solution Approach 2:
The patent employs nested redistribution layers where intermediate redistribution layers are positioned between upper and lower dies, with inner redistribution layers coupled to through-silicon vias. This nested configuration allows multiple functional layers to be integrated within the vertical stack, achieving efficient heat management and signal transmission without increasing the device footprint.
2Area of stationary object
If multiple dies are assembled in 2D arrangement, then footprint is minimized, but signal transmission speed and heat management worsen
Solution Approach 1:
The patent achieves high-speed signal transmission by moving from 2D to 3D architecture. Through-silicon vias provide direct vertical pathways for signals between stacked dies, significantly reducing signal path length and transmission delay compared to 2D lateral connections. The face-to-face stacking configuration enables shorter inter-die distances, improving signal speed while maintaining compact package size.
Solution Approach 2:
The patent segments the package into multiple stacked dies with intermediate redistribution layers positioned between them. This segmentation allows independent optimization of each die layer and enables parallel signal paths through multiple TSVs, increasing overall signal transmission capacity and speed without proportionally increasing package size.
3Temperature
If through-silicon vias are clustered within single die footprint, then heat management improves, but manufacturing complexity increases
Solution Approach 1:
The patent merges multiple functional elements into a unified stacked architecture. Through-silicon vias serve dual purposes: electrical interconnection between dies and thermal conduction pathways. The intermediate redistribution layers are integrated with TSV structures, combining signal routing and heat dissipation functions. This merging approach improves heat management while managing manufacturing complexity through standardized multi-die stacking processes.
Data Source
AI summary
Reduced-profile semiconductor device apparatus are achieved by thinning a semiconductive device substrate at a backside surface to expose a through-silicon via pillar, forming a recess to further expose the through-silicon via pillar, and by seating an electrical bump in the recess to contact both the through-silicon via pillar and the recess. In an embodiment, the electrical bump contacts a semiconductor package substrate to form a low-profile semiconductor device apparatus. In an embodiment, the electrical bump contacts a subsequent die to form a low-profile semiconductor device apparatus.