Faceplate Aperture Profiling for Uniform PECVD Edge Flow
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Solution Overview
Problem
Conventional semiconductor processing chambers face challenges in achieving uniform film deposition across substrates due to limitations in tuning recipes for on-wafer adjustments, leading to non-uniformity and edge peak formation issues during high precursor delivery rates.
Innovation Solution
The use of a semiconductor processing chamber with a faceplate featuring a central axis, multiple apertures, and recesses that extend radially outward, where the aperture profile transitions from a cylindrical to a conical or countersunk shape, and recesses are blocked from providing fluid access, allowing for controlled precursor flow and plasma generation, thereby reducing edge region deposition and enhancing uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If regular patterns of features such as apertures are used in chamber components to promote symmetry and uniformity, then uniformity of material delivery is improved, but the ability to tune recipes for on-wafer adjustments is limited
Solution Approach 1:
The faceplate is divided into multiple zones with different aperture configurations. Each zone can have different aperture sizes, shapes, or densities, allowing independent control of material delivery to different regions of the substrate. This segmentation enables both uniform overall delivery and localized tuning capabilities.
Solution Approach 2:
Different regions of the faceplate are assigned different properties through varying aperture characteristics. For example, the center region may have smaller apertures while edge regions have larger apertures, or vice versa, depending on the desired deposition profile. This local differentiation allows simultaneous achievement of uniformity and tunability.
2Productivity
If high precursor delivery rates are used to increase productivity, then output is improved, but edge peak formation and non-uniformity occur
Solution Approach 1:
The faceplate implements region-specific aperture designs where edge regions have different aperture characteristics compared to center regions. This local differentiation compensates for the edge peak effect by reducing precursor delivery to edge regions when high overall delivery rates are used, thereby maintaining uniformity while preserving high productivity.
Solution Approach 2:
The aperture parameters (size, shape, density) are varied across different regions of the faceplate to optimize material delivery distribution. By changing these parameters locally, the system can operate at high precursor delivery rates without suffering from edge peak formation, as the varied aperture parameters distribute the high flux more uniformly across the substrate surface.
3Manufacturing precision
If aperture profiles with conical or countersunk sections are used to control flow, then edge region deposition is reduced, but device complexity increases
Solution Approach 1:
Conical or countersunk aperture profiles are implemented specifically in edge region apertures where edge peak control is needed, while center region apertures may maintain simpler cylindrical profiles. This localized application of complex profiles achieves edge deposition control without unnecessarily complicating the entire faceplate design.
Solution Approach 2:
The faceplate aperture design is segmented into different profile types based on regional requirements. Edge apertures use conical or countersunk profiles to control edge peak formation, while other regions may use simpler profiles. This segmentation allows the system to achieve precise edge control while keeping overall device complexity manageable through selective application of complex features.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables improved film deposition uniformity across the substrate surface, reducing non-uniformity by up to 15% and maintaining edge region plasma generation to control plasma density and distribution.
Implementation Method 1
The faceplate may define a plurality of apertures through the faceplate. The faceplate may define a plurality of recesses extending about and radially outward of the plurality of apertures.
Implementation Method 2
An electrical source configured to strike a plasma within the processing region of the semiconductor processing chamber
Implementation Method 3
The chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support.
Data Source
AI summary
Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface of the faceplate and the substrate support may at least partially define a processing region within the semiconductor processing chamber. The faceplate may be characterized by a central axis, and the faceplate may define a plurality of apertures through the faceplate. The faceplate may define a plurality of recesses extending about and radially outward of the plurality of apertures. Each recess of the plurality of recesses may extend from the second surface of the faceplate to a depth less than a thickness of the faceplate.