Fan-Out Package Buffer Layer for CTE Stress Relief
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Solution Overview
Problem
Ensuring the reliability of integrated fan-out packages in semiconductor technology, which face challenges due to stress from coefficient of thermal expansion (CTE) mismatch between package substrates and dies, leading to potential delamination and cracking.
Innovation Solution
Incorporating a buffer layer with a lower Young's modulus and specific CTE characteristics between the packages to act as a stress-release structure, thereby reducing stress concentrations and enhancing structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If integrated fan-out packages are made compact, then package size is reduced, but stress concentration increases leading to delamination and cracking
Solution Approach 1:
A buffer layer is introduced as an intermediary structure between adjacent integrated fan-out packages. This buffer layer, positioned in the gap between packages and extending from the substrate surface to a height between 10-50 micrometers, acts as a stress-absorbing mediator that prevents stress transfer between packages, thereby eliminating delamination and cracking while maintaining compact package dimensions
2Reliability
If buffer layer height is increased, then stress release capability is improved, but manufacturing complexity increases
Solution Approach 1:
The buffer layer height is optimized to a specific parameter range (10-50 micrometers) that provides sufficient stress release capability while remaining compatible with existing manufacturing processes. This parameter optimization ensures effective stress absorption without requiring complex additional manufacturing steps or equipment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The buffer layer effectively mitigates stress-induced delamination and cracking, improving the reliability and structural integrity of semiconductor packages by releasing thermal expansion mismatch-induced stress.
Implementation Method 1
stress from coefficient of thermal expansion (CTE) mismatch between package substrates and dies
Implementation Method 2
buffer layer with a lower Young's modulus and specific CTE characteristics between the packages to act as a stress-release structure
Data Source
AI summary
A semiconductor package includes a redistribution structure, a first die, a second die and a buffer layer. The second die is disposed between the first die and the redistribution structure, and the second die is electrically connected to the first die and bonded to the redistribution structure. The buffer layer is disposed on a first sidewall of the second die, wherein a second sidewall of the buffer layer is substantially flush with a third sidewall of the first die.


