Fan-Out Structure with Integrated Passive Device and Discrete Component
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Solution Overview
Problem
Integrated passive devices (IPDs) are not suitable for providing passive devices for digital circuits due to volume constraints, limiting their capacity and effectiveness in systems combining both digital and analog circuits.
Innovation Solution
A semiconductor device with a substrate and conductive vias, an IPD structure connected to the vias, and an encapsulant, along with a first interconnect structure extending outside the substrate's footprint, allowing for the integration of discrete components like capacitors to enhance passive device capacity and functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If IPD structure is used to provide passive devices, then analog circuit functionality is improved, but digital circuit capacity is limited due to volume constraints
Solution Approach 1:
The patent extends interconnect structures outside the substrate footprint to access discrete passive devices in three-dimensional space, transitioning from two-dimensional IPD layout to three-dimensional hybrid integration. This allows large value capacitors and other passive devices to be accessed from the backside or edges of the substrate, effectively increasing the available capacity beyond the substrate's top surface area.
Solution Approach 2:
The patent combines IPD structures with discrete passive devices in a hybrid configuration, merging the advantages of both approaches. The IPD provides small value capacitors and resistors for analog circuits, while discrete devices provide large value capacitors for digital circuits, creating a unified package that serves both digital and analog functionality.
2Ease of manufacture
If IPD is used for combining passive devices, then fabrication is simplified, but passive device capacity for digital circuits is limited
Solution Approach 1:
The patent segments the passive device provision into two parts: IPD structures formed during front-end manufacturing for small value components, and discrete passive devices packaged separately for large value components. This segmentation allows each part to be optimized independently while maintaining overall fabrication simplicity through modular integration.
Solution Approach 2:
The patent introduces an intermediary packaging structure that bridges the IPD and discrete passive devices. The packaging includes interconnect structures that electrically connect the IPD to discrete devices, acting as an intermediary that enables the combination of both approaches without complicating the overall manufacturing process.
3Use of energy by moving object
If smaller die size is achieved through front-end process improvements, then power consumption is reduced, but passive device capacity remains constrained by two-dimensional layout
Solution Approach 1:
The patent resolves the conflict between small die size and adequate passive device capacity by utilizing three-dimensional space through backside interconnects and external discrete devices. This allows the front-end process to focus on minimizing die size for power efficiency, while passive device capacity is expanded in the third dimension through the packaging structure.
Data Source
AI summary
A semiconductor device is made by providing a temporary carrier for supporting the semiconductor device. An integrated passive device (IPD) is mounted to the temporary carrier using an adhesive. The IPD includes a capacitor and a resistor and has a plurality of through-silicon vias (TSVs). A discrete component is mounted to the temporary carrier using the adhesive. The discrete component includes a capacitor. The IPD and the discrete component are encapsulated using a molding compound. A first metal layer is formed over the molding compound. The first metal layer is connected to the TSVs of the IPD and forms an inductor. The temporary carrier and the adhesive are removed, and a second metal layer is formed over the IPD and the discrete component. The second metal layer interconnects the IPD and the discrete component and forms an inductor. An optional interconnect structure is formed over the second metal layer.