Fan-Out Redistribution Structure Using Shrinkage-Controlled Insulation
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and efficient packaging of semiconductor dies due to limitations in existing redistribution structures, which often require planarization processes that increase complexity and thickness, and do not effectively utilize filler-free insulating layers with controlled shrinkage rates.
Innovation Solution
The development of redistribution structures using filler-free insulating layers with controlled shrinkage rates to avoid the need for planarization, allowing for thinner insulating layers and thicker metallization patterns for improved signal delivery and heat dissipation, along with a ceramic carrier for enhanced electrical and thermal properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If conventional redistribution structures with fillers are used, then planarity can be achieved, but the device thickness increases and manufacturing complexity increases due to required planarization processes
Solution Approach 1:
The patent changes the key parameter of the insulating material by using a filler-free composition with controlled shrinkage rate (5-20% volumetric shrinkage upon curing). This parameter change eliminates the need for planarization processes while achieving the desired planarity, thereby reducing device thickness without sacrificing surface flatness
Solution Approach 2:
The patent extracts and removes the filler components from the insulating material composition, using only the resin matrix. This extraction eliminates the volume occupied by fillers and allows the material to shrink uniformly during curing, achieving planarity without requiring additional planarization steps that would increase device thickness
2Shape
If planarization processes are applied to achieve flat surfaces, then planarity is improved, but manufacturing complexity and process steps increase
Solution Approach 1:
The patent performs preliminary action by formulating the insulating material with specific shrinkage characteristics before the planarization step would normally be required. The material's controlled shrinkage during curing proactively achieves the planar surface in advance, eliminating the need for subsequent planarization processes and reducing manufacturing complexity
Solution Approach 2:
The patent converts the potential harm of shrinkage (which could cause warping or non-planarity) into a benefit by carefully controlling the shrinkage rate at 5-20% volumetric shrinkage. This controlled shrinkage actively produces the desired planar surface, transforming what could be a defect into a feature that eliminates the need for planarization processes
3Length of stationary object
If thinner insulating layers are used, then device thickness is reduced, but signal delivery and heat dissipation capabilities may be compromised
Solution Approach 1:
The patent changes the electrical and thermal parameters of the insulating material by using a filler-free resin composition with high electrical conductivity and thermal conductivity. This allows the material to maintain thin dimensions while still providing adequate signal delivery and heat dissipation capabilities, as the resin matrix itself can be formulated with these enhanced properties without filler additives
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, reduces device thickness, and enhances signal transfer and heat dissipation capabilities while maintaining planarity without the need for additional planarization steps, leading to more efficient and compact semiconductor packaging.
Implementation Method 1
the insulating material has a shrinkage rate between about 5% to about 20% when cured from the as-deposited state to the cured state
Data Source
AI summary
A redistribution structure is made using filler-free insulating materials with a high shrinkage rate. As a result, good planarity may be achieved without the need to perform a planarization of each insulating layer of the redistribution structure, thereby simplifying the formation of the redistribution structure.