Fan-Out Semiconductor Packaging With Protective Film Warpage Control
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Solution Overview
Problem
In semiconductor device manufacturing using fan-out package technology, semiconductor chips are prone to damage during the process, which can lead to unreliable device performance and reduced reliability.
Innovation Solution
A method involving the use of protective films with specific elastic modulus and adhesion strengths to prevent damage during the formation of re-distribution layers, ensuring the semiconductor elements and encapsulation materials are protected throughout the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If fan-out package technology is used to manufacture semiconductor devices, then productivity and device complexity are improved, but semiconductor elements are prone to damage during the process, reducing reliability
Solution Approach 1:
A protective film is applied to the semiconductor element before the semiconductor device manufacturing process begins. This preliminary protective action prevents damage during subsequent manufacturing steps including re-distribution layer formation, encapsulation material application, and singulation processes.
Solution Approach 2:
The protective film acts as an intermediary layer between the semiconductor element and the manufacturing process environment. It mediates the interaction by absorbing mechanical stresses and preventing direct contact between harmful factors (such as encapsulation materials and singulation blades) and the semiconductor element.
2Adaptability or versatility
If re-distribution layer is formed on the semiconductor element, then device functionality is improved, but the semiconductor element or encapsulation material may be damaged during the process
Solution Approach 1:
The protective film serves as an intermediary layer during re-distribution layer formation. It allows the re-distribution layer to be formed on the semiconductor element while preventing direct damage to the element itself or the encapsulation material from the formation process.
Solution Approach 2:
The protective film is applied before re-distribution layer formation to establish a protective barrier in advance. This preliminary protection ensures that subsequent processing steps can proceed without risking damage to the semiconductor element.
3Manufacturing precision
If the protective film has high storage elastic modulus to suppress warpage, then manufacturing precision is improved, but the film may be too rigid to accommodate thermal expansion during processing
Solution Approach 1:
The protective film's mechanical properties are optimized by controlling its storage elastic modulus within a specific range (300-6000 MPa at 25°C and 0.1-200 MPa at 250°C). This parameter optimization allows the film to provide sufficient rigidity for warpage control during assembly while maintaining enough flexibility to accommodate thermal expansion during high-temperature processing steps.
Solution Approach 2:
The protective film is formulated as a composite material with specific viscoelastic properties. By combining materials with different thermal and mechanical properties, the film achieves a balance between suppressing warpage at room temperature and accommodating thermal expansion at processing temperatures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in the production of highly reliable semiconductor devices by preventing damage and ensuring accurate formation of re-distribution layers, while also managing warpage and adhesion during assembly and singulation.
Implementation Method 1
bonding a first protective film to a second surface of the encapsulation body
Implementation Method 2
the first protective film contains a curable material and a storage elastic modulus of the first protective film at 25° C. after being cured is 300 MPa to 6000 MPa
Implementation Method 3
encapsulating the plurality of semiconductor elements with an encapsulation material
Data Source
AI summary
A method for manufacturing a semiconductor device includes preparing a plurality of semiconductor elements, preparing a support member, attaching the plurality of semiconductor elements to the support member so that second surfaces of the plurality of semiconductor elements face the support member, encapsulating the plurality of semiconductor elements with an encapsulation material, removing the support member from an encapsulation material layer in which the plurality of semiconductor elements is encapsulated with the encapsulation material, bonding a first protective film to a second surface of the encapsulation material layer located on the second surface side of the plurality of semiconductor elements, and forming a re-distribution layer on a first surface of the encapsulation material layer located on the first surface side of the plurality of semiconductor elements after bonding the first protective film to the encapsulation material layer.