Fan-Out Redistribution Structure Using Shrinkage-Tuned Insulating Layers
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high integration density and efficient packaging of semiconductor dies due to limitations in existing redistribution structures, which often require planarization processes that increase complexity and thickness, while also compromising signal delivery and heat dissipation.
Innovation Solution
The development of redistribution structures using filler-free insulating layers with controlled shrinkage rates to avoid the need for planarization, combined with thicker metal metallization patterns for enhanced signal delivery and heat dissipation, and the use of ceramic carriers for improved thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If planarization processes are used in redistribution structures, then surface flatness is improved, but device thickness and manufacturing complexity increase
Solution Approach 1:
The patent applies preliminary action by forming the insulating layer with controlled shrinkage properties before subsequent processing steps. The insulating layer is designed to shrink at a specific rate during curing, which pre-compensates for surface irregularities and eliminates the need for later planarization processes, thereby reducing manufacturing complexity while maintaining surface flatness
Solution Approach 2:
The patent utilizes parameter changes by controlling the shrinkage rate of the insulating layer material. By selecting materials with specific shrinkage characteristics and adjusting curing parameters, the patent achieves the desired surface flatness without requiring additional planarization steps, thus reducing device thickness and manufacturing complexity
2Shape
If planarization processes are used in redistribution structures, then surface flatness is improved, but device thickness increases
Solution Approach 1:
The patent applies preliminary action by forming the insulating layer with controlled shrinkage properties before subsequent processing steps. The insulating layer is designed to shrink at a specific rate during curing, which pre-compensates for surface irregularities and eliminates the need for later planarization processes, thereby reducing manufacturing complexity while maintaining surface flatness
Solution Approach 2:
The patent utilizes parameter changes by controlling the shrinkage rate of the insulating layer material. By selecting materials with specific shrinkage characteristics and adjusting curing parameters, the patent achieves the desired surface flatness without requiring additional planarization steps, thus reducing device thickness and manufacturing complexity
3Length of stationary object
If thinner metallization patterns are used, then device thickness is reduced, but signal delivery and heat dissipation deteriorate
Solution Approach 1:
The patent applies local quality by using thicker metallization patterns specifically in the redistribution structure where signal delivery and heat dissipation are critical, while maintaining overall device compactness through the shrinkage-based thinning of insulating layers. This localized approach ensures reliable signal transmission without unnecessarily increasing overall device thickness
4Ease of manufacture
If traditional insulating materials are used, then manufacturing is simplified, but planarization processes are required increasing complexity
Solution Approach 1:
The patent utilizes parameter changes by controlling the shrinkage rate of the insulating layer material. By selecting materials with specific shrinkage characteristics and adjusting curing parameters, the patent achieves the desired surface flatness without requiring additional planarization steps, thus reducing device thickness and manufacturing complexity
Solution Approach 2:
The patent applies composite materials by using insulating layers with specific shrinkage properties that combine the benefits of ease of manufacture with the advantage of eliminating planarization processes. The controlled shrinkage behavior of these materials provides both manufacturing simplicity and process efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of thinner, more efficient redistribution structures with improved signal transfer and heat dissipation capabilities, reducing the need for planarization processes and enabling more compact, reliable semiconductor devices.
Implementation Method 1
the insulating material has a shrinkage rate between about 65% and 80%, such as between about 68% and 75%, as the insulating material shrinks from an as-deposited state to a cured state
Implementation Method 2
the use of ceramic carriers for improved thermal management
Data Source
AI summary
A redistribution structure is made using filler-free insulating materials with high shrinkage rate. As a result, good planarity may be achieved without the need to perform a planarization of each insulating layer of the redistribution structure, thereby simplifying the formation of the redistribution structure.