Fan-Out Semiconductor Package Silane Coupling Adhesion
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Solution Overview
Problem
Existing fan-out semiconductor packages face challenges with close adhesion between insulating materials and metal circuits due to surface roughness, leading to delamination and reduced heat resistance, especially when high-temperature processes are involved, which affects the reliability and signal transfer capabilities.
Innovation Solution
A fan-out semiconductor package is designed with a thin insulating film made of a silicon-based compound, such as silicon oxide, silicon nitride, or silicon oxynitride, formed between the insulating layers and metal circuits to enhance adhesion and thermal stability, preventing metal diffusion and oxide growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If surfaces of insulating material and metal circuit are made smooth to reduce surface roughness, then manufacturing precision is improved, but close adhesion between layers decreases causing delamination
Solution Approach 1:
A silane-based coupling agent is introduced as an intermediary substance between the insulating material surface and the metal circuit. The coupling agent contains both silane groups that bond with the insulating material and functional groups that bond with the metal, creating a strong interfacial connection that compensates for the reduced mechanical interlocking due to smooth surfaces.
Solution Approach 2:
The chemical composition and surface properties of the insulating material interface are changed by applying the silane-based coupling agent. This chemical modification creates new bonding parameters that enhance adhesion strength, allowing the interface to maintain strong bonding even with reduced surface roughness.
2Manufacturing precision
If photoimagable dielectric is heat treated at high temperature to promote copper circuit oxidation, then manufacturing precision is improved, but close adhesion between PID and copper circuit decreases
Solution Approach 1:
The silane-based coupling agent is applied to the insulating material surface before the high-temperature heat treatment process. This preliminary action creates a protective and bonding layer that remains stable during subsequent high-temperature processing, preventing oxidation-related adhesion loss while still allowing controlled copper oxidation for manufacturing precision.
Solution Approach 2:
The thermal stability parameters of the insulating material interface are changed by introducing the silane-based coupling agent, which has high heat resistance. This allows the system to withstand high-temperature heat treatment processes without suffering the adhesion degradation that would normally occur during such thermal processing.
3Productivity
If circuit line widths and pitches are reduced to achieve finer pitch, then productivity is improved, but close adhesion decreases due to reduced physical coupling force
Solution Approach 1:
The adhesion mechanism is changed from relying primarily on mechanical interlocking through surface roughness to chemical bonding through the silane-based coupling agent. This substitution allows adhesion to be maintained even when physical coupling force is reduced due to finer circuit dimensions.
Solution Approach 2:
A composite interfacial structure is created by combining the insulating material, silane-based coupling agent, and metal circuit in a multi-layer configuration. This composite structure provides both chemical bonding strength and thermal stability, enabling reliable adhesion in fine-pitch circuits where mechanical interlocking is insufficient.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution improves the close adhesion between insulating materials and metal circuits, ensuring high thermal stability and reliability, even at finer circuit pitches, and prevents signal loss, facilitating efficient radio frequency signal transfer.
Implementation Method 1
a thin insulating film is formed on an interface between an insulating material and a metal circuit using a silicon based compound
Data Source
AI summary
A semiconductor package includes: a semiconductor chip having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the semiconductor chip; and a connection member including a first insulating layer disposed on the active surface of the semiconductor chip, a first redistribution layer disposed on the first insulating layer, first vias penetrating through the first insulating layer and electrically connecting the connection pads and the first redistribution layer to each other, and a first insulating film covering the first insulating layer and the first redistribution layer. The first insulating film includes a silicon based compound.