Faraday Cage Plasma Etching With Shutter Control

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Solution Overview

Problem

Plasma etching using a Faraday cage faces challenges in achieving uniformity and precision, particularly in forming microstructures with varying depth gradients, leading to irregular etching areas and the formation of needle-shaped structures that affect image quality in wearable devices like virtual and augmented reality devices.

Innovation Solution

A plasma etching method employing a Faraday cage with a metal mask and a shutter to control the etching process, allowing for the formation of groove patterns with specific depth gradients by shielding parts of the mesh portion, thereby controlling the etching rate and reducing needle-shaped structure generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If plasma etching is performed using a Faraday cage without additional shielding, then the etching process can be conducted with a simple structure, but the etching uniformity deteriorates and needle-shaped structures form on the substrate

Engineering Contradiction:
ImproveFaraday cage structureVSAvoidetching uniformity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The Faraday cage structure is segmented by dividing the mesh portion into multiple regions (first mesh region and second mesh region) with different mesh densities. The first mesh region has a first mesh density while the second mesh region has a second mesh density different from the first, allowing different etching rates in different areas to achieve uniform etching across the substrate

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the Faraday cage are given different local properties through varying mesh densities. The first mesh region and second mesh region have distinct mesh densities tailored to produce specific etching rates in their respective areas, enabling precise control over etching uniformity and preventing needle-shaped structure formation

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If the mesh density is increased to improve etching control, then the etching precision improves, but the device complexity increases

Engineering Contradiction:
Improveetching precisionVSAvoidFaraday cage structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

Rather than uniformly increasing mesh density across the entire Faraday cage, the structure is segmented into regions with different mesh densities. This allows precise etching control only where needed while maintaining simpler structure in other areas, thus improving etching precision without proportionally increasing overall device complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

High mesh density is applied locally only in specific regions where precise etching control is required, while other regions maintain lower mesh density. This localized approach achieves the necessary etching precision without unnecessarily complicating the overall device structure

Inventive Principle:
Principle #3Local quality

3Device complexity

If a single mesh density is used throughout the Faraday cage, then the device structure remains simple, but the ability to form groove patterns with varying depth gradients is limited

Engineering Contradiction:
ImproveFaraday cage structureVSAvoidpattern formation capability
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The Faraday cage is divided into multiple mesh regions with different densities, enabling the formation of groove patterns with varying depth gradients. Each region's specific mesh density can be optimized for creating particular pattern features, greatly enhancing the device's versatility in pattern formation

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different local regions of the Faraday cage are equipped with different mesh densities to create specific etching characteristics in each area. This allows the device to form diverse groove patterns with different depth gradients simultaneously, significantly improving adaptability while maintaining reasonable structural complexity

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the precise formation of groove patterns with varying depth gradients, improving etching uniformity and reducing needle-shaped structures, resulting in enhanced image quality and accuracy for diffraction grating light guide plates used in wearable devices.

Implementation Method 1

providing a substrate for etching in which a metal mask having an opening pattern portion is provided on one surface in a Faraday cage provided with a mesh portion on an upper surface

Methodology Applied
Scientific EffectFaraday cage: Faraday Cage

Implementation Method 2

a first patterning step of forming a first pattern area on the substrate for etching by using plasma etching

Methodology Applied
Scientific EffectPlasma etching: Plasma

Data Source

PatentUS11462393B2Plasma etching method using faraday cage
Publication Date: 2022.10.04 LG CHEM LTD
  • US11462393B2 patent drawing
  • US11462393B2 patent drawing
  • US11462393B2 patent drawing

AI summary

A plasma etching method using a Faraday cage, including: providing an etch substrate in a Faraday cage, where the etch substrate includes a metal mask provided on one surface thereof, and where an upper surface of the Faraday cage is provided with a mesh portion; a first patterning step of forming a first pattern area on the etch substrate; and a second patterning step of forming a second pattern area on the etch substrate after shielding at least a part of the mesh portion with a shutter. The first pattern area includes a first groove pattern having a depth gradient of 0 to 40 nm per 5 mm, and the second pattern area includes a second groove pattern having a depth gradient of 50 to 300 nm per 5 mm.