Segmented Faraday Cup Housing for Ion Beam Purity
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Solution Overview
Problem
Conventional Faraday systems in ion implantation apparatuses suffer from contamination of semiconductor wafers due to impurity ions of one conductivity type being collected on the housing and subsequently picked up by ions of a different conductivity type, leading to reduced production yield.
Innovation Solution
The Faraday system incorporates a housing with multiple apertures that rotate to selectively receive ion beams of corresponding types, preventing contamination by ensuring that only one type of conductive impurity ions are exposed to the wafer surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional Faraday system with a single housing and aperture is used, then the structure is simple and easy to manufacture, but impurity ions of one conductivity type are collected on the housing and subsequently picked up by ions of a different conductivity type, causing wafer contamination
Solution Approach 1:
The housing is divided into multiple segments, each with its own aperture, where each segment is dedicated to a specific conductivity type of impurity ions. This segmentation prevents cross-contamination between different ion types while maintaining a manageable structural complexity.
Solution Approach 2:
Different portions of the housing are assigned different functions: each housing segment is specialized to handle a specific conductivity type of ions. This local specialization ensures that impurity ions of one conductivity type do not contaminate wafers during subsequent implantation of ions with different conductivity types.
2Reliability
If the Faraday system uses multiple apertures for different ion types, then contamination is prevented, but the housing structure becomes more complex
Solution Approach 1:
The housing is segmented into multiple independent sections, each with a dedicated aperture for a specific ion type. This modular segmentation maintains manufacturing ease by allowing each segment to be manufactured and assembled independently, reducing overall complexity.
3Device complexity
If a single aperture is used in the housing, then the structure is simple, but impurity ions of one conductivity type are collected on the housing and picked up by ions of a different conductivity type
Solution Approach 1:
The housing is segmented into multiple sections, each with its own aperture dedicated to a specific conductivity type of ions. This segmentation prevents cross-contamination and ensures precise control over ion implantation concentrations for different ion types.
Solution Approach 2:
Each housing segment is specialized for a specific ion type, ensuring that impurity ions of one conductivity type are not collected on the housing and subsequently picked up by ions of a different conductivity type, thereby maintaining manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively prevents contamination of the wafer surface, enhancing the production yield of semiconductor devices by ensuring precise control over ion implantation processes.
Implementation Method 1
a Faraday cup adapted to collect an ion beam to generate a current
Implementation Method 2
a suppression electrode adapted to form an electric field adjacent to an inlet of the Faraday cup to prevent secondary electrons from discharging
Data Source
AI summary
A Faraday system is disclosed wherein the Faraday system comprises a Faraday cup adapted to collect an ion beam to generate a current, a suppression electrode adapted to form an electric field adjacent to an inlet of the Faraday cup to prevent secondary electrons from discharging from the Faraday cup in response to the ion beam, and a housing surrounding the Faraday cup and the suppression electrode and comprising a plurality of apertures, wherein each aperture is adapted to selectively receive an ion beam comprising a corresponding type of conductive impurities.