Fast-Switching Circuit Assembly for Power Converters

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional power electronics converters are limited by wiring inductance, which restricts the maximum switching frequency and speed of semiconductor switches, leading to overvoltages and reduced performance.

Innovation Solution

Combining semiconductor switches and their gate driver circuits on a common carrier board to minimize wiring inductance, allowing for high-speed switching with parallel connections and central logic control, and using wide-bandgap semiconductor technology for enhanced performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the gate driver circuit is connected to the semiconductor switch module via separate wires and bonding wires, then the module structure is modular and easy to manufacture, but the wiring inductance increases which limits the maximum switching frequency

Engineering Contradiction:
Improvemodular assemblyVSAvoidswitching frequency
Core Design Contradiction:
Ease of manufactureVSSpeed

Solution Approach 1:

The gate driver circuit is integrated directly onto the module carrier board in close proximity to the semiconductor switches, merging the control function with the power switching function. This eliminates the need for separate wire connections and bonding wires between the gate driver and switches, thereby reducing wiring inductance while maintaining modular manufacturability.

Inventive Principle:
Principle #5Merging (Combining)

2Productivity

If the switching frequency is increased to improve productivity, then the switching speed increases, but overvoltages are induced by the wiring inductances which reduces reliability

Engineering Contradiction:
Improveswitching frequencyVSAvoidsemiconductor protection
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

By integrating the gate driver circuit directly on the module carrier board adjacent to the semiconductor switches, the patent minimizes the loop area and wiring inductance. This allows high switching frequencies to be operated without inducing harmful overvoltages, thus maintaining both high productivity and semiconductor protection.

Inventive Principle:
Principle #5Merging (Combining)

3Speed

If the distance between the gate driver circuit and the gate is reduced to decrease wiring inductance, then the switching speed increases, but the device complexity increases due to integration requirements

Engineering Contradiction:
Improveswitching speedVSAvoidintegration structure
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The gate driver circuit is arranged in the same plane as the semiconductor switches on the module carrier board, utilizing the two-dimensional layout space efficiently. This approach reduces the distance between gate driver and switches without requiring three-dimensional stacking or complex vertical integration, thus minimizing wiring inductance while keeping the device structure relatively simple.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentEP3281287B1Fast-switching circuit asssembly for a converter
Publication Date: 2021.07.28 SIEMENS AG
  • EP3281287B1 patent drawingFigure 1
  • EP3281287B1 patent drawingFigure 2
  • EP3281287B1 patent drawingFigure 3~4

AI summary

The invention relates to a circuit assembly (20) for an electrical converter (1), comprising switching units (15), of which each has a semiconductor switch (16) and a gate driver circuit (17) for controlling the semiconductor switch (16). It should be possible to switch the semiconductor switches (16) especially quickly by means of the respective gate driver circuits (17) thereof. For this purpose, in the case of each switching unit (15), the semiconductor switch (16) and the gate driver circuit (17) are arranged on a common carrier circuit board (21) and the gate driver circuit (17) is electrically connected to a gate (G) of the semiconductor switch (16) by means of at least one conducting track (23) of the carrier circuit board (21).