Fe-Co Magnetic Storage Device Film Thickness Reduction
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Solution Overview
Problem
Magnetic storage devices with magnetoresistive elements face challenges in reducing film thickness while maintaining a high tunnel magnetoresistive ratio, often requiring complex multilayer structures that complicate manufacturing and increase film thickness.
Innovation Solution
The magnetic storage device employs a configuration with a reference layer and a shift cancelling layer, where the reference layer has a higher iron content and the shift cancelling layer has a lower iron content, both containing cobalt, to reduce film thickness and enhance the tunnel magnetoresistive ratio without using platinum or palladium multilayers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a complex multilayer structure with platinum or palladium is used, then the tunnel magnetoresistive ratio is improved, but the film thickness increases and manufacturing complexity increases
Solution Approach 1:
The patent changes the material composition parameters by using iron-cobalt alloys with specific atomic ratios (Fe: 30-70 at%, Co: 30-70 at%) in the magnetic layers, and controlling the thickness of each layer (first magnetic layer: 1-3 nm, second magnetic layer: 2-5 nm, third magnetic layer: 1-3 nm). These parameter optimizations achieve high tunnel magnetoresistive ratio without requiring platinum or palladium multilayers, thus reducing film thickness while maintaining performance.
Solution Approach 2:
The patent employs composite material structures by combining iron and cobalt in specific ratios within the magnetic layers, and using magnesium oxide as a tunnel barrier layer. This composite approach with Fe-Co alloys and MgO barrier creates an effective magnetoresistive structure that eliminates the need for precious metal multilayers, achieving both high TMR ratio and reduced film thickness.
2Manufacturing precision
If a complex multilayer structure with platinum or palladium is used, then the tunnel magnetoresistive ratio is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The patent optimizes manufacturing by changing material parameters to iron-cobalt alloys with controllable composition ranges and specific thickness values. These parameter specifications enable straightforward sputtering or deposition processes without requiring complex multilayer stacking of platinum or palladium, thus simplifying manufacturing while achieving high TMR ratio.
Solution Approach 2:
The patent extracts and eliminates the platinum or palladium multilayer components from the traditional structure. By removing these unnecessary precious metal layers and replacing them with simplified iron-cobalt alloy magnetic layers and magnesium oxide barrier, the manufacturing process becomes less complex while maintaining or improving the tunnel magnetoresistive ratio.
3Length of stationary object
If the film thickness is reduced, then the manufacturing is simplified, but maintaining high tunnel magnetoresistive ratio becomes difficult
Solution Approach 1:
The patent achieves high TMR ratio in thin films by precisely controlling material parameters: iron content (30-70 at%), cobalt content (30-70 at%), and layer thicknesses (first magnetic layer: 1-3 nm, second magnetic layer: 2-5 nm, third magnetic layer: 1-3 nm). These optimized parameters enable thin film structure to deliver high magnetoresistive performance without requiring thick or complex multilayer designs.
Solution Approach 2:
The patent uses composite Fe-Co alloy materials with optimized composition ratios and magnesium oxide tunnel barrier to achieve high TMR ratio in reduced thickness. The synergistic combination of iron and cobalt in specific proportions, combined with the insulating MgO layer, creates an efficient magnetoresistive structure that maintains high performance despite reduced overall film thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for a thinner film and improved tunnel magnetoresistive ratio, simplifying manufacturing and outperforming structures with platinum or palladium, while maintaining the amorphous state of key layers for better film flatness and magnetic properties.
Implementation Method 1
a magnetoresistive element. The magnetoresistive element including: a first stacked layers; a first non-magnetic layer on the first stacked layers; a second stacked layers on the first non-magnetic layer
Data Source
AI summary
According to one embodiment, a device includes an element including: a first stacked; a first nonmagnet on the first stacked; a second stacked on the first nonmagnet; a second nonmagnet on the second stacked; and a first magnet on the second nonmagnet. The second stacked including: a second magnet in contact with the second nonmagnet, including Fe and Co; a third nonmagnet at an opposite side of the second nonmagnet relative to the second magnet, including Mo or W; and a third magnet on the first nonmagnet, in contact with the third nonmagnet, including Fe and Co. An atomic ratio of Fe in the third magnet is lower than an atomic ratio of Fe in the second magnet.