Field Enhanced ICP Reactor Heater Segmentation
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Solution Overview
Problem
Inductively coupled plasma reactors face issues with plasma non-uniformity due to open break heater elements and reduced RF energy availability when using no break heater elements, which affect etch rates and plasma patterns.
Innovation Solution
A field enhanced inductively coupled plasma processing system with a dielectric lid, plasma source assembly including inductive coils and electrodes electrically coupled to an RF generator, and a heater element positioned between the lid and plasma source, allowing for increased RF energy coupling and uniform plasma formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If an open break heater element is used, then the heater can be disposed above the dielectric lid to maintain temperature, but plasma non-uniformity occurs resulting in non-uniform etch rates and asymmetry in etch patterns
Solution Approach 1:
The heater element is segmented into multiple sections with breaks or gaps in its structure. This segmentation prevents the heater from forming a continuous conductive loop that would otherwise couple with the RF field. The breaks in the heater element allow the RF energy to pass through without being absorbed by the heater, thereby eliminating plasma non-uniformity while still providing temperature maintenance functionality.
2Manufacturing precision
If a no break heater element is used, then plasma non-uniformity is eliminated, but RF energy inductively couples to the heater element reducing energy available for plasma formation
Solution Approach 1:
A dielectric material is introduced as an intermediary between the heater element and the RF field. This dielectric layer prevents direct inductive coupling between the RF field and the heater element while still allowing thermal conduction from the heater to the chamber wall. The dielectric acts as a barrier that blocks RF energy absorption by the heater, thereby preserving RF energy for plasma formation while maintaining the heater's temperature control function.
3Manufacturing precision
If a no break heater element is used, then etch pattern symmetry is improved, but the plasma strike window is reduced
Solution Approach 1:
The dielectric intermediary prevents RF energy absorption by the heater element, ensuring that sufficient RF energy is available for plasma strike across a wider range of operating conditions. This expands the plasma strike window while maintaining the symmetry benefits of the no-break heater configuration.
Solution Approach 2:
The electrical properties of the heater system are changed by introducing the dielectric material, which alters the coupling between the RF field and heater element. This parameter change allows the system to achieve both good etch pattern symmetry and an expanded plasma strike window by controlling the electrical interaction while preserving thermal functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system provides enhanced RF energy for plasma striking while maintaining plasma uniformity and density, offering improved plasma strike capabilities and control over processing conditions.
Implementation Method 1
one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein
Implementation Method 2
one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein
Implementation Method 3
a heater element may be disposed above the dielectric lid to facilitate maintaining a constant temperature in the chamber during and between processes
Data Source
AI summary
Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.