Overlapping Horizontal Feature Stacks With Dummy End Supports

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Solution Overview

Problem

Existing integrated circuit fabrication methods face challenges in producing smaller and denser memory cells due to the lack of support structures in the end portions of the stack, leading to potential sagging or breaking of horizontal features during processing.

Innovation Solution

The implementation of dummy structures in the end portion of the stack, which are vertically overlapping and horizontally extending, provide support to the horizontal features, preventing sagging or breaking during processing and enabling the formation of more compact circuitry components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the stack size is reduced to enable smaller and denser memory cells, then the manufacturing precision and structural stability deteriorate due to lack of support structures in the end portions

Engineering Contradiction:
Improvememory cell sizeVSAvoidstructural stability
Core Design Contradiction:
Volume of moving objectVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by forming dummy structures in the end portions of the stack before the main fabrication processes occur. These dummy structures are created in advance to provide necessary support to the horizontal features, preventing sagging or breaking during subsequent processing steps. This preliminary structural reinforcement enables the reduction of memory cell size while maintaining manufacturing precision and structural stability throughout the fabrication process.

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If dummy structures are added to support horizontal features, then the device complexity increases, but the manufacturing precision is improved

Engineering Contradiction:
Improvestructural stabilityVSAvoidstack structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies local quality by adding dummy structures only in the end portions of the stack where support is actually needed, rather than uniformly throughout the entire structure. This localized approach provides necessary structural reinforcement to prevent sagging or breaking of horizontal features while minimizing the overall increase in device complexity. The dummy structures are strategically placed to offer support exactly where the horizontal features are most vulnerable during processing.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12406919B2Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
Publication Date: 2025.09.02 MICRON TECHNOLOGY INC
  • US12406919B2 patent drawing
  • US12406919B2 patent drawing
  • US12406919B2 patent drawing

AI summary

A method of forming circuitry components includes forming a stack of horizontally extending and vertically overlapping features. The features extend horizontally though a primary portion of the stack with at least some of the features extending farther in the horizontal direction in an end portion. Operative structures are formed vertically through the features in the primary portion and dummy structures are formed vertically through the features in the end portion. Openings are formed through the features to form horizontally elongated and vertically overlapping lines from material of the features. The lines individually extend laterally about sides of vertically extending portions of both the operative structures and the dummy structures. Sacrificial material that is elevationally between the lines is at least partially removed in the primary and end portions laterally between the openings. Other aspects and implementations are disclosed.