Feedback FET Ring Oscillators for Stable Random Bit Storage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional LIM technologies face challenges in implementing true random number generators (TRNG) and physical unclonable functions (PUF) due to poor device uniformity and stability, leading to vulnerabilities in data security, especially in data-centric applications like AI and IoT, where generated encryption keys are susceptible to memory hacking.
Innovation Solution
A ring oscillator utilizing feedback field-effect transistors with diode structures performs both memory and switching functions, incorporating a positive feedback loop for random voltage generation and storage, enabling simultaneous random number generation and storage with excellent device stability, applicable to CMOS manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional LIM technology uses volatile memory devices (SRAM, DRAM) for random number generation, then the computation and memory functions can be integrated, but the device uniformity and stability are poor leading to security vulnerabilities
Solution Approach 1:
The patent combines the memory function and switching function into a single feedback field-effect transistor device. The FET operates in different regions (saturation region for memory function, linear region for switching function) to simultaneously provide both capabilities, eliminating the need for separate memory structures and improving device uniformity.
Solution Approach 2:
The feedback field-effect transistor is designed to perform multiple functions: it serves as both a memory element (storing random bits through threshold voltage shifts) and a switching element (controlling current flow for logic operations). This multi-functionality reduces system complexity while maintaining reliability.
2Speed
If encryption keys are stored in memory arrays with easy data access, then retrieval is fast, but the system becomes vulnerable to memory hacking
Solution Approach 1:
The patent extracts the memory function from conventional volatile memory arrays and integrates it directly into the feedback FET devices used for random number generation. The random bits are stored as threshold voltage shifts within the FETs themselves, removing data from vulnerable external memory arrays while maintaining fast access through direct device state reading.
Solution Approach 2:
The feedback loop acts as an intermediary mechanism that continuously updates and refreshes the random bit storage within the FET threshold voltages. This intermediary process ensures data is constantly regenerated and stored in a format that is fast to access but difficult to extract through traditional memory hacking methods.
3Loss of energy
If multiple separate devices are used for random number generation and storage, then functional separation is achieved, but power consumption and device count increase
Solution Approach 1:
The patent merges the random number generation function and storage function into the same feedback field-effect transistor device. The FET generates random bits through noise harvesting and stores them through threshold voltage shifts, eliminating the need for separate generation and storage devices, thereby reducing standby power and device count.
Solution Approach 2:
The feedback FET changes its operating parameters dynamically: it operates in the saturation region for memory function (high output impedance for stable voltage storage) and in the linear region for switching function (low output impedance for current flow control). This parameter switching enables dual functionality without requiring separate devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances data security in AI and IoT by providing a stable, low-power ring oscillator that generates and stores random numbers, reducing standby power and improving computational efficiency while being resistant to memory hacking.
Implementation Method 1
a feedback field-effect transistor that performs a memory function and a switching function based on a positive feedback loop
Implementation Method 2
a memory characteristics that remembers a memory state is implemented as holes or electrons accumulate in a potential well in the channel region due to the positive feedback loop
Implementation Method 3
an oscillation operation is performed based on supply voltage applied through the drain terminal and the source terminal
Data Source
AI summary
The feedback field-effect transistor-based ring oscillator includes a plurality of feedback field-effect transistors each in which a diode structure is present as an n-type doped channel region and a p-type doped channel region between a drain terminal and a source terminal, a gate terminal is present in the diode structure, wherein the plurality of feedback field-effect transistors operates as p-channel mode when the gate terminal is present on the n-type doped channel region and operates as n-channnel mode when the gate terminal is present on the p-type doped channel region, and in a plurality of inverters formed by the plurality of feedback field-effect transistor, an output terminal of an inverter of each stage is input to an input terminal of a next stage and an oscillation operation is performed based on supply voltage applied through the drain terminal and the source terminal.