Free-Electron Laser Synchrotron Radiation Capture for Metrology

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Solution Overview

Problem

Current semiconductor manufacturing lacks an efficient means for producing and harnessing extreme ultraviolet (EUV) power for high-resolution inspection and metrology, particularly in photolithography processes, due to the inefficiencies in existing free-electron laser (FEL) designs and the substantial real estate and costs associated with housing these large sources.

Innovation Solution

The system captures synchrotron radiation energy generated at bending regions of an FEL light source's electron path and utilizes it for operating metrology tools, integrating FEL light sources with semiconductor fabs to provide EUV light for both processing and metrology operations, thereby optimizing energy use and reducing the footprint and costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If free-electron laser sources are used to generate EUV light for photolithography, then sufficient power for HVM can be achieved, but the real estate required and costs to house these large sources become substantial

Engineering Contradiction:
ImproveEUV light powerVSAvoidfacility footprint
Core Design Contradiction:
PowerVSArea of stationary object

Solution Approach 1:

The patent combines the lithography tool and metrology tool into a single integrated system, allowing both functions to share the same physical space and infrastructure. This merging eliminates the need for separate large-scale FEL source facilities for both lithography and metrology, significantly reducing the overall facility footprint while maintaining sufficient EUV power for both operations

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent creates a multi-functional system where a single FEL source serves dual purposes: driving both the lithography tool for semiconductor manufacturing and the metrology tool for inspection and analysis. This universal approach allows one facility to support multiple critical functions, reducing the total real estate required compared to having separate dedicated facilities for each function

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Loss of energy

If intrinsic energy from FEL lasers is not harnessed, then the system is simpler to design, but energy efficiency and cost-effectiveness are reduced

Engineering Contradiction:
ImproveFEL energy utilizationVSAvoidsystem complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent converts the previously wasted intrinsic energy from the FEL laser into a useful resource by directing it to power the metrology tool. What was once considered excess or harmful energy loss is now transformed into a beneficial resource that enables high-resolution inspection capabilities, improving overall energy efficiency without proportionally increasing system complexity

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The system is designed to be self-sufficient by using the FEL source's own intrinsic energy to power both the lithography and metrology functions. The metrology tool harnesses energy that would otherwise be wasted, creating a self-service arrangement where the system's own energy output serves multiple functions, reducing the need for additional external energy sources

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables efficient energy utilization from FEL sources for metrology data acquisition and analysis, enhancing the capability for high-resolution inspection and reducing the physical and financial burdens of housing large FEL sources within semiconductor manufacturing facilities.

Implementation Method 1

A first synchrotron radiation is provided from the first electron path bend to a first metrology tool

Methodology Applied
Scientific EffectSynchrotron radiation: Synchrotron Radiation

Data Source

PatentUS9844124B2Method, apparatus and system for using free-electron laser compatible EUV beam for semiconductor wafer metrology
Publication Date: 2017.12.12 GLOBALFOUNDRIES US INC
  • US9844124B2 patent drawing
  • US9844124B2 patent drawing
  • US9844124B2 patent drawing

AI summary

At least one method, apparatus and system for providing capturing synchrotron radiation for a metrology tool, are disclosed. A beam using a first light emitting device is provided. The first light emitting device comprises a first electron path bend. A first synchrotron radiation is provided from the first electron path bend to a first metrology tool configured to perform a metrology inspection using the first synchrotron radiation.