Fence-Shaped Overlay Mark for Double Patterning Alignment
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Solution Overview
Problem
The existing double patterning process in electronic device manufacturing results in a weak signal for alignment due to the small area and insufficient contrast provided by circular spacers left after photoresist layer removal, making alignment challenging.
Innovation Solution
A method of forming a fence-shaped overlay mark by creating photoresist patterns with first and second strips arranged in parallel, followed by anisotropically etching a spacer material layer to form islands on the sidewalls, which are left as dot-type strip patterns to serve as the overlay mark, enhancing contrast and signal strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a circular spacer is used as the overlay mark after photoresist removal, then the manufacturing process is simple, but the signal strength is weak and alignment is difficult
Solution Approach 1:
The overlay mark is segmented into multiple dot-type strip patterns arranged in a fence shape, where each strip contains multiple dots. This segmentation increases the total area and contrast of the overlay mark while maintaining ease of manufacture through systematic patterning
Solution Approach 2:
The overlay mark transitions from a two-dimensional circular spacer to a three-dimensional dot-type strip pattern with vertical sidewalls. This dimensional change increases the effective area and provides better contrast for alignment detection
2Difficulty of detecting and measuring
If the overlay mark area is increased to improve signal strength, then alignment becomes easier, but the photoresist pattern complexity increases
Solution Approach 1:
The increased area is achieved by segmenting the overlay mark into multiple strips with multiple dots each, arranged in a fence pattern. This segmentation allows area expansion while maintaining manageable pattern complexity through systematic repetition
Solution Approach 2:
Multiple dots are nested within each strip, and multiple strips are arranged within the fence-shaped photoresist pattern. This nested structure efficiently increases the overlay mark area while organizing complexity in a hierarchical manner
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed method provides sufficient contrast and strengthens the alignment signal, facilitating easier alignment in the existing double patterning process by creating a more visible overlay mark through the formation of dot-type strip patterns with larger spacers.
Implementation Method 1
the spacer material layer is anisotropically etched to form a plurality of spacers on a sidewall of the photoresist patterns and in each of the gaps
Data Source
AI summary
A method of forming an overlay mark is provided. A plurality of photoresist patterns are formed on a substrate. Each of the photoresist patterns includes a first strip and a plurality of second strips arranged in parallel. The first strip crosses the second strips to form a fence shape. Further, there is a space between two adjacent photoresist patterns, and the space is fence-shaped. A plurality of islands are formed in each of the spaces to form dot type strip patterns. The photoresist patterns are removed, and the dot type strip patterns serve as the overlay mark.


