FEOL Interconnect Structure for Backside Memory Routing
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Solution Overview
Problem
Conventional semiconductor device fabrication methods require extensive processing time and complex operations for back-end-of-line (BEOL) interconnect formation, limiting design flexibility and efficiency in forming backside electrical connections.
Innovation Solution
Forming interconnect structures during front-end-of-line (FEOL) processing, allowing pre-positioned interconnects to be accessed from the backside during BEOL or post-probe processing, thereby eliminating the need for BEOL TSVs and enabling direct-to-device routing and ultra-thin die stacking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional BEOL processing methods are used to form interconnects, then backside electrical connections can be achieved, but extensive processing time and complex fabrication operations are required
Solution Approach 1:
Interconnect structures are pre-formed during FEOL processing before the probe stage, rather than being created later during BEOL processing. This preliminary formation of interconnects at the front-end reduces subsequent processing steps and time requirements while maintaining the necessary backside electrical connection capabilities
2Reliability
If conventional BEOL processing methods are used to form interconnects, then backside electrical connections can be achieved, but complex fabrication operations are required
Solution Approach 1:
The formation of interconnect structures is merged with FEOL processing operations, combining what were previously separate FEOL and BEOL steps into a unified process flow. This integration eliminates the need for complex standalone BEOL interconnect formation operations while achieving the same functional result
3Reliability
If conventional BEOL processing is used, then interconnects can be formed, but design options for routing configurations are limited
Solution Approach 1:
Multiple routing configurations and interconnect patterns are pre-established during FEOL processing, allowing designers to select from various routing options before final assembly. This preliminary configuration enables greater design flexibility and adaptability compared to conventional BEOL methods
Data Source
AI summary
Systems and methods for a semiconductor device having a front-end-of-line structure are provided. The semiconductor device may include a dielectric material having a backside formed on a front side of a semiconductor substrate material and a front side, and an interconnect structure extending through the dielectric material. The interconnect structure may be electrically connected to a semiconductor memory array proximate the front side of the dielectric material. The semiconductor device may further have an insulating material encasing at least a portion of the semiconductor memory array and an opening created during back-end-of-line processing through which the active contact surface at the backside of the interconnect structure is exposed for electrical connection.