FePd Magnetic Structures with Diffusion Barriers

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Solution Overview

Problem

Conventional semiconductor devices face limitations in scaling due to device reliability and increased power consumption, and existing spintronic devices struggle with diffusion issues in magnetic tunnel junctions, which affect thermal stability and tunnel magnetoresistance ratios.

Innovation Solution

The development of magnetic structures with a composite free layer featuring an FePd alloy with perpendicular magnetic anisotropy, coupled with diffusion barriers like Tantalum (Ta) or Tungsten (W) to prevent Pd diffusion, enhancing thermal stability and tunnel magnetoresistance ratios.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If Pd diffusion is not prevented in magnetic tunnel junctions, then manufacturing is simpler, but thermal stability and tunnel magnetoresistance ratios deteriorate

Engineering Contradiction:

Improvethermal stabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

A diffusion barrier layer (TaN or WN) is introduced as an intermediary between the FePd layer and adjacent layers. This barrier layer prevents Pd diffusion into the MgO tunnel barrier and CoFeB layer, thereby maintaining thermal stability and tunnel magnetoresistance ratios without requiring complex multi-layer structures

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The magnetic tunnel junction employs a composite structure combining FePd (providing perpendicular magnetic anisotropy), TaN or WN (providing diffusion barrier functionality), CoFeB (providing high spin polarization), and MgO (providing tunnel barrier properties). This composite material approach resolves the contradiction by integrating multiple functional materials in a unified structure that simultaneously achieves thermal stability and prevents Pd diffusion

Inventive Principle:

Principle #40Composite materials

2Productivity

If conventional semiconductor scaling continues, then device density increases, but reliability and power consumption worsen

Engineering Contradiction:

Improvedevice densityVSAvoiddevice reliability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent replaces conventional charge-based semiconductor devices with spin-based magnetic tunnel junction devices. The FePd layer with perpendicular magnetic anisotropy enables spin transfer torque switching, substituting electrical field control with spin current control, thereby improving reliability and reducing power consumption at high device densities

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The invention changes the fundamental operating parameters from charge-based to spin-based phenomena. By utilizing perpendicular magnetic anisotropy in FePd and spin-polarized current through CoFeB, the device achieves non-volatile memory operation with higher reliability and lower power consumption compared to conventional semiconductor scaling approaches

Inventive Principle:

Principle #35Parameter changes

3Reliability

If Pd diffusion is allowed, then device structure is simpler, but tunnel magnetoresistance ratios decrease

Engineering Contradiction:

Improvetunnel magnetoresistance ratioVSAvoidlayer structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The TaN or WN diffusion barrier layer serves as an intermediary that selectively blocks Pd atoms while maintaining structural integrity and magnetic properties. This single barrier layer achieves high tunnel magnetoresistance ratios by preventing Pd contamination in the MgO tunnel barrier and CoFeB layer without requiring multiple complex layers

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the thermal stability and tunnel magnetoresistance ratios of spintronic devices, enabling reliable and efficient magnetization switching with reduced power consumption, while maintaining compatibility with semiconductor processes.

Implementation Method 1

a first layer including an FePd alloy. The FePd alloy exhibits perpendicular magnetic anisotropy

Methodology Applied

Scientific EffectPerpendicular magnetic anisotropy: Anisotropy

Implementation Method 2

a diffusion barrier between the first layer and the second layer. The diffusion barrier may reduce or substantially eliminate diffusion of Pd into the second layer

Methodology Applied

Scientific EffectDiffusion barrier: Diffusion Barrier

Implementation Method 3

generating a spin current through a spin Hall channel to subject the composite free layer to a magnetic switching torque

Methodology Applied

Scientific EffectSpin Hall effect: Hall Effect

Data Source

PatentUS10546997B2Magnetic structures including FePd

Publication Date: 2020.01.28 REGENTS OF THE UNIVERSITY OF MINNESOTA

AI summary

Articles including a fixing layer and a free layer including a layer including an FePd alloy. The free layer may include a composite layer including a perpendicular synthetic antiferromagnetic (p-SAF) structure. Techniques for forming and using articles including FePd alloy layers or p-SAF structures. Example articles and techniques may be usable for storage and logic devices.