FePt-C Sputtering Target for High Carbon Thin Films

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Solution Overview

Problem

The existing methods for producing FePt—C-based thin films require multiple targets, leading to high equipment costs and complex preparation processes, and struggle to achieve high carbon content in FePt—C sputtering targets.

Innovation Solution

A single FePt—C-based sputtering target is developed, containing Fe, Pt, and C with a structure where the FePt alloy phase and C phase are mutually dispersed, allowing for a high carbon content of 21 at % to 70 at %, and optionally including additional metal elements like Cu, with a relative density of 90% or higher, produced through a process involving mixing and molding under pressure in an oxygen-containing atmosphere.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multiple targets (Fe, Pt, C) are used for vapor-deposition to form FePtC thin film, then the thin film can be formed with carbon content, but the equipment cost becomes high and the preparatory work takes time and effort

Engineering Contradiction:
Improvecarbon content in thin filmVSAvoidnumber of targets and equipment
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent combines multiple elements (Fe, Pt, and C) into a single FePt-C-based sputtering target material that contains all necessary components in predetermined ratios. This eliminates the need for separate Fe, Pt, and C targets, reducing equipment complexity while maintaining the ability to form FePtC thin films with controlled carbon content.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The invention uses a composite material structure where FePt alloy powder and carbon powder are mixed in specific proportions (Fe: 20-60 at%, Pt: 20-60 at%, C: 10-40 at%) to create a single-target sputtering material. This composite approach allows simultaneous deposition of all elements while simplifying the sputtering system configuration.

Inventive Principle:
Principle #40Composite materials

2Quantity of substance

If carbon content in FePt-C sputtering target is increased beyond 20 at%, then high carbon content thin film can be formed, but the target structure stability and density may be compromised

Engineering Contradiction:
Improvecarbon content in targetVSAvoidtarget structure stability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent optimizes the carbon content parameter within a specific range (10-40 at%) and controls the FePt alloy composition (with Pt at 40-60 at%) to maintain target structural stability. By adjusting these compositional parameters, the invention achieves high carbon content in the thin film while preserving target integrity and sputtering performance.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates a heterogeneous microstructure where carbon particles are dispersed within the FePt alloy matrix. This local distribution of carbon (rather than uniform mixing) allows high carbon content regions to exist while the FePt matrix provides structural stability, enabling the target to maintain reliability despite high overall carbon content.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the stable production of FePt—C thin films with high carbon content using a single target, reducing equipment costs and simplifying the process while maintaining high relative density and low impurity levels, suitable for magnetic recording media.

Implementation Method 1

FePt—C-based sputtering target containing Fe, Pt, and C

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS8858674B2FePt--C-based sputtering target and process for producing the same
Publication Date: 2014.10.14 TANAKA KIKINZOKU KOGYO KK
  • US8858674B2 patent drawing
  • US8858674B2 patent drawing
  • US8858674B2 patent drawing

AI summary

An FePt—C-based sputtering target contains Fe, Pt, and C and has a structure in which an FePt-based alloy phase and a C phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities. The content of C is 21 at % or more and 70 at % or less based on the total amount of the target.