FeRAM Ferroelectric Layer Phase Recovery After Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The manufacturing process of ferroelectric random-access memory (FeRAM) devices faces challenges in maintaining the ferroelectric phase of the peripheral region of the ferroelectric layer during etching, leading to degraded electrical characteristics and response variations.
Innovation Solution
A method involving the use of gas plasma treatment to transform the non-ferroelectric phase of the ferroelectric layer back to a ferroelectric phase, specifically using gases like ammonia, oxygen, or ozone, to achieve at least 60% ferroelectric phase in the peripheral regions of the data storage elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If etching process is used to form top electrode and sidewall spacer, then device structure is formed, but ferroelectric phase in peripheral region transforms to non-ferroelectric phase
Solution Approach 1:
Gas plasma treatment is applied before the etching process to transform the non-ferroelectric phase back to ferroelectric phase in advance, preparing the ferroelectric layer to resist phase transformation during subsequent etching operations
Solution Approach 2:
The harmful effect of etching-induced phase transformation is converted into a benefit by using the same etching environment (plasma) to restore and maintain the ferroelectric phase through controlled gas plasma treatment
2Productivity
If conventional manufacturing process is used, then production efficiency is maintained, but ferroelectric characteristics are degraded
Solution Approach 1:
The gas plasma treatment step is merged with the existing etching process flow, combining the phase restoration function with the structural formation process to achieve both high productivity and ferroelectric phase purity
Solution Approach 2:
By adjusting plasma treatment parameters (gas type, power, duration), the process optimizes the balance between maintaining ferroelectric phase purity and preserving manufacturing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the ferroelectric phase presence in the peripheral regions, improving remnant polarization, reducing current leakage, enhancing data retention, and increasing breakdown voltage while maintaining improved capacitance.
Implementation Method 1
A method involving the use of gas plasma treatment to transform the non-ferroelectric phase of the ferroelectric layer back to a ferroelectric phase
Implementation Method 2
A ferroelectric random-access memory (FeRAM) device is a non-volatile memory device using a ferroelectric material layer
Data Source
AI summary
A semiconductor device includes a bottom electrode, a top electrode, a sidewall spacer, and a data storage element. The sidewall spacer is disposed aside the top electrode. The data storage element is located between the bottom electrode and the top electrode, and includes a ferroelectric material. The data storage element has a peripheral region which is disposed beneath the sidewall spacer and which has at least 60% of ferroelectric phase. A method for manufacturing the semiconductor device and a method for transforming a non-ferroelectric phase of a ferroelectric material to a ferroelectric phase are also disclosed.