Ferroelectric MOSFET Anti-Fuse Programming Without Oxide Breakdown

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional anti-fuse devices rely on gate oxide breakdown, which is prone to variations due to manufacturing process changes, affecting the efficiency of the breakdown voltage and reliability of the anti-fuse operation.

Innovation Solution

An anti-fuse device utilizing a ferroelectric layer sandwiched between the gate electrode and the channel of a MOSFET structure, where a permanent electric field polarization is induced by voltage pulses to create a conduction path, replacing the gate oxide breakdown method for programming.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If gate oxide breakdown method is used for anti-fuse programming, then the anti-fuse device can be programmed to on state, but the breakdown voltage varies due to process variation affecting manufacturing precision

Engineering Contradiction:

Improveprogramming operation stabilityVSAvoidbreakdown voltage consistency

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent replaces the gate oxide breakdown mechanism with a ferroelectric layer that utilizes polarization state changes. By applying voltage pulses to switch the ferroelectric polarization between up and down states, the anti-fuse device achieves stable programming without relying on variable breakdown voltage. This parameter change from breakdown-based to polarization-based switching resolves the contradiction between programming reliability and manufacturing precision.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent substitutes the electrical breakdown mechanism (destructive physical process) with a ferroelectric polarization switching mechanism (reversible electrical process). The ferroelectric layer's ability to maintain stable polarization states replaces the unstable gate oxide breakdown process, eliminating the harmful variability in breakdown voltage while maintaining reliable programming operation.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Ease of operation

If gate oxide breakdown is used, then anti-fuse programming can be achieved, but power control through gate oxide requires precise pulse width and amplitude determination

Engineering Contradiction:

Improveprogramming operation simplicityVSAvoidpulse parameter control

Core Design Contradiction:

Ease of operationVSDevice complexity

Solution Approach 1:

The ferroelectric layer inherently provides stable polarization switching at well-defined voltage thresholds, eliminating the need for complex pulse width and amplitude optimization. The material's self-service characteristic of maintaining stable polarization states simplifies the programming operation to straightforward voltage pulse application, reducing device complexity while improving ease of operation.

Inventive Principle:

Principle #25Self-service

3Productivity

If conventional gate oxide breakdown method is used, then anti-fuse device can be programmed, but process variation changes breakdown voltage decreasing anti-fuse blown out efficiency

Engineering Contradiction:

Improveanti-fuse blown out efficiencyVSAvoidbreakdown voltage variation

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent fundamentally changes the programming mechanism from gate oxide breakdown to ferroelectric polarization switching. The ferroelectric layer's polarization state can be reliably switched between up and down states using voltage pulses, providing consistent programming efficiency independent of manufacturing variations. This parameter change eliminates the direct dependence on precise breakdown voltage control, thereby improving anti-fuse blown out efficiency.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach stabilizes the programming operation, reducing the impact of process variations and allowing the anti-fuse device to turn on easily with decreased threshold voltage, even at zero bias gate voltage, enhancing reliability and efficiency compared to conventional methods.

Implementation Method 1

A channel conduction path is induced and established by a permanent electric field polarization caused in the ferroelectric layer after giving a plurality of voltage pulses at the gate electrode

Methodology Applied

Scientific EffectFerroelectric polarization:

Data Source

PatentUS20240413078A1Anti-Fuse Device by Ferroelectric Characteristic

Publication Date: 2024.12.12 NAN YA TECH

AI summary

An anti-fuse device by ferroelectric characteristic is provided, which comprises an active area including a source region, a drain region laterally spaced from the source region and a channel between the source region and drain region, and a gate structure including a ferroelectric layer formed on the channel as well as a gate electrode formed on the ferroelectric layer. A programming operation of the anti-fuse device is performed by application of power to the gate electrode and at least one of the source region and drain region to cause a permanent electric field polarization in the ferroelectric layer to induce a conduction path along the channel. After the programming operation, the anti-fuse device will much easily turn on as the threshold voltage decreases even the operating voltage applied to the gate electrode is zero bias.