Ferroelectric Bipolar Transistor Structure for Narrower Intrinsic Base
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Solution Overview
Problem
Conventional processing schemes for bipolar transistors face challenges in limiting the horizontal width of the intrinsic base while maintaining efficient current flow, often requiring additional process steps and operations.
Innovation Solution
Incorporating ferroelectric spacers and/or layers in the bipolar transistor structure, which are polarized by a switching voltage to create depletion regions, reducing the intrinsic base width and enhancing electron collection efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If conventional processing schemes use bounding materials to limit intrinsic base width, then the horizontal width of intrinsic base is reduced, but additional process steps and operations are required
Solution Approach 1:
The patent changes the physical state and electrical properties of the spacer material by applying a switching voltage to polarize the ferroelectric material. This parameter change creates a depletion region that effectively reduces the intrinsic base width without requiring additional structural materials or process steps, resolving the contradiction between base width reduction and process complexity
Solution Approach 2:
The patent replaces the mechanical/physical approach of using bounding materials to limit base width with an electrical field approach. By applying voltage to polarize the ferroelectric spacer, the depletion region is created through electrical field effects rather than physical constraints, eliminating the need for additional bounding materials and associated process steps
2Speed
If intrinsic base width is reduced to increase operating frequency, then electron collection speed improves, but manufacturing complexity increases
Solution Approach 1:
The ferroelectric spacer material possesses inherent polarization properties that automatically create the depletion region when switched. The material self-regulates the electric field distribution and depletion region formation without requiring external control mechanisms or additional manufacturing complexity, enabling base width reduction while maintaining ease of manufacture
Solution Approach 2:
The patent introduces dynamic control of the intrinsic base width through voltage switching. The ferroelectric spacer can be polarized or depolarized to dynamically adjust the depletion region and effective base width, allowing optimization of electron collection speed for different operating conditions without permanent structural modifications or increased manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of ferroelectric materials in bipolar transistors allows for reduced intrinsic base width, increasing operating frequencies and electron collection speed without additional manufacturing steps, and enabling customizable operational characteristics.
Implementation Method 1
ferroelectric spacers and/or layers in the bipolar transistor structure, which are polarized by a switching voltage to create depletion regions
Implementation Method 2
polarized by a switching voltage to create depletion regions, reducing the intrinsic base width
Data Source
AI summary
Embodiments of the disclosure provide a bipolar transistor structure with a ferroelectric material. A structure of the disclosure may include a base over a substrate. The base includes a first portion laterally between an emitter and a collector, and a second portion over the first portion. A ferroelectric spacer is adjacent the second portion of the base. Other structures include a ferroelectric layer over a back gate terminal of a substrate. A base is on the ferroelectric layer. The base includes a first portion laterally between an emitter and a collector, and a second portion over the first portion.