Ferroelectric Junction Termination Structure for Lower Ron at High BV
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Solution Overview
Problem
Current high voltage semiconductor devices face challenges with complex processes, large size, high cost, and increased on-resistance due to conventional junction termination structures, which hinder efficient voltage blocking and current conduction.
Innovation Solution
A high voltage semiconductor device incorporating a combined junction termination protection structure with a RESURF (Reduced Surface Field) structure, featuring a ferroelectric material layer and biasing field plates, which reduces surface electric fields and enhances breakdown voltage while minimizing device size and on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional junction termination structures (JTE, FLR, DT2, FP, FFP, VLD) are used to raise breakdown voltage, then the blocking voltage is improved, but the device area increases and on-resistance increases
Solution Approach 1:
The patent introduces a ferroelectric material layer that changes the electrical parameters at the junction termination. The ferroelectric material modifies the electric field distribution through its polarization properties, enabling higher breakdown voltage in a reduced area compared to conventional structures.
Solution Approach 2:
The patent combines ferroelectric material with the semiconductor substrate to create a composite structure at the junction termination. This composite approach leverages the unique properties of ferroelectric materials to achieve superior electrical performance in a compact footprint.
2Reliability
If conventional junction termination structures are used to raise breakdown voltage, then the blocking voltage is improved, but the manufacturing process becomes complex and cost increases
Solution Approach 1:
The ferroelectric material layer is integrated using standard semiconductor fabrication techniques such as atomic layer deposition (ALD) or chemical vapor deposition (CVD), followed by conventional patterning. This approach modifies the electrical parameters without requiring fundamentally new manufacturing processes, thereby controlling complexity.
3Reliability
If larger junction termination structures are used to ensure breakdown voltage, then the blocking voltage is improved, but the normalized on-resistance increases
Solution Approach 1:
The ferroelectric material alters the electric field distribution at the junction termination through its polarization effect, enabling the structure to sustain higher voltages without requiring increased area. This parameter change directly addresses the trade-off between blocking voltage and on-resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively raises breakdown voltage, reduces on-resistance, and allows for miniaturization of the device, while simplifying the manufacturing process by integrating ferroelectric materials through deposition and etching steps, thus overcoming the limitations of existing technologies.
Implementation Method 1
a ferroelectric material layer 105 positioned below the first biasing field plate 104 and in contact with the first biasing field plate 104
Data Source
AI summary
The present invention provides a high voltage semiconductor device comprising a combined junction terminal protection structure with a ferroelectric material and method of making the same, the device comprises: an active area formed with the high voltage semiconductor device; a combined junction terminal protection structure having a RESURF (Reduced Surface Field) structure, the RESURF structure comprising a first biasing field plate electrically connecting to the active area and a ferroelectric material layer positioned below the first biasing field plate and in contact with the first biasing field plate. The high voltage semiconductor device structure may further assist in raising breakdown voltage (BV) of the device and meanwhile effectively reduce on-resistance (Ron) of the device compared with current junction terminal protection structure, and then miniaturization of the device structure may be fulfilled more easily. Further, the process may be performed easily because only common deposition and patterning processes of Hf-oxide ferroelectric layer should be added to current process.