Data Read/Write Device Using Ferroelectric Field Effect
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Solution Overview
Problem
Current data storage technologies, such as NAND-type flash memory and small-sized hard disk drives, face limitations in recording density due to increased processing costs and tracking precision issues, while novel memories like phase change memory and MEMS memory struggle with electric field interference and power consumption.
Innovation Solution
A data read/write device utilizing a recording layer composed of a composite compound with transition elements and specific cation elements, applied with a voltage to generate resistance changes, achieving high recording density and low power consumption through optimized electron transmission and ion transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If NAND-type flash memory reduces minimum line width to increase recording density, then recording density is improved, but processing cost increases remarkably
Solution Approach 1:
The patent replaces mechanical/minimalist fabrication approaches with a chemical field effect mechanism. By using a ferroelectric layer to generate a vertical electric field that induces lateral charge accumulation at intersections, the system achieves recording without relying on traditional minimal line width fabrication, thus avoiding the processing cost increase associated with further scaling.
Solution Approach 2:
The patent changes the fundamental recording parameter from geometric dimension (line width) to electrical field effect (charge accumulation). By applying voltage to word lines and bit lines that intersect over a recording region with a ferroelectric layer, the system records data through field-induced charge distribution rather than through physical feature size, enabling high density without proportional cost increase.
2Quantity of substance
If small-sized hard disk drive reduces size to increase recording density, then recording density is improved, but tracking precision cannot be sufficiently allocated
Solution Approach 1:
The patent replaces the mechanical head-positioning and tracking system with a field-based memory structure. By using intersecting word lines and bit lines that create localized charge accumulation at their intersections over ferroelectric regions, the system eliminates the need for mechanical tracking precision, achieving high density recording through electrical field localization rather than mechanical positioning.
3Quantity of substance
If phase change memory reduces element size to increase recording density, then recording density is improved, but electric field interference occurs
Solution Approach 1:
The patent introduces a ferroelectric layer as an intermediary between the write/read operations and the recording medium. This ferroelectric layer localizes the electric field effect to specific regions through its polarization properties, preventing electric field interference between adjacent recording elements while enabling high-density recording through field-induced charge accumulation at line intersections.
4Reliability
If novel memory uses large electric power pulse for write operation, then data recording is achieved, but power consumption increases
Solution Approach 1:
The patent changes the write operation mechanism from direct high-power pulsing to a two-stage process: first applying voltage to word lines and bit lines to induce field effect charge accumulation in the ferroelectric layer, then using a much smaller read current to detect the resistance change. This field effect approach achieves reliable recording with significantly reduced power consumption compared to direct high-power pulsing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high recording density and low power consumption, surpassing current technologies by improving electron transmission and ion transfer, thus enhancing data storage efficiency.
Implementation Method 1
means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data
Data Source
AI summary
A data read/write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a “d” orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.