Ferroelectric Gate Dielectric Transistor Nonvolatile Memory
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Solution Overview
Problem
Current memory devices, such as DRAM, are highly volatile and require frequent refresh, losing data upon power loss, and lack scalability for high integration levels.
Innovation Solution
Incorporating a transistor with a gate dielectric comprising both ferroelectric and non-ferroelectric materials, which enables two stable memory states by polarizing the ferroelectric material, reducing short channel effects and enhancing scalability through a nonvolatile memory cell design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional DRAM memory cells are used, then rapid read/write speed is achieved, but high volatility requires frequent refresh and data loss occurs on power loss
Solution Approach 1:
The gate dielectric is constructed as a composite structure combining ferroelectric material (for nonvolatile data retention) and non-ferroelectric material (for rapid read/write performance and interface quality). This composite approach allows the memory cell to achieve both fast operation and nonvolatile storage, resolving the contradiction between speed and reliability.
2Ease of manufacture
If conventional memory cell designs are used, then manufacturing is straightforward, but scalability for high integration levels is limited
Solution Approach 1:
The gate dielectric structure is configured with different material compositions in different regions (first region with ferroelectric material, second region with non-ferroelectric material), creating a laterally differentiated structure. This dimensional variation enables improved scalability and integration density while maintaining compatibility with existing manufacturing processes.
3Reliability
If ferroelectric material is used in the gate dielectric, then nonvolatile storage is achieved, but short channel effects increase
Solution Approach 1:
The gate dielectric is designed with spatially varying material properties: ferroelectric material is placed in the first region where it provides nonvolatile storage, while non-ferroelectric material is placed in the second region where it suppresses short channel effects. This local differentiation allows each material to perform its optimal function without compromising the other, resolving the contradiction between data retention and short channel effect suppression.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a nonvolatile memory cell that retains data without power and improves scalability, enabling higher integration levels and stable data storage.
Implementation Method 1
Incorporating a transistor with a gate dielectric comprising both ferroelectric and non-ferroelectric materials, which enables two stable memory states by polarizing the ferroelectric material
Data Source
AI summary
Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within the base adjacent the gate. A gate dielectric has a first segment between the source region and the gate, a second segment between the drain region and the gate, and a third segment between the first and second segments. At least a portion of the gate dielectric comprises ferroelectric material. In some embodiments the ferroelectric material is within each of the first, second and third segments. In some embodiments, the ferroelectric material is within the first segment or the third segment. In some embodiments, a transistor has a gate, a source region and a drain region; and has a channel region between the source and drain regions. The transistor has a gate dielectric which contains ferroelectric material between the source region and the gate.