Ferroelectric Layer Structure With Hydrogen Trap and Diffusion Barrier
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Ferroelectric characteristics in semiconductor devices, such as transistors and capacitors, require improvement in reliability and performance, particularly in terms of hydrogen diffusion and impurity management within the ferroelectric layers.
Innovation Solution
A ferroelectric device structure is developed with a ferroelectric layer containing hafnium and zirconium, surrounded by insulators that inhibit hydrogen diffusion and capture impurities, including a second insulator with an amorphous structure and oxygen-aluminum composition to fix hydrogen, and a third insulator with nitrogen-silicon composition to prevent hydrogen diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a ferroelectric layer is used in semiconductor devices, then ferroelectric characteristics are achieved, but hydrogen diffusion and impurity contamination occur which degrade reliability
Solution Approach 1:
The patent introduces insulator layers as intermediary structures between the ferroelectric layer and surrounding environments. Specifically, an insulator layer containing oxygen and aluminum is positioned to capture hydrogen, while another insulator layer containing nitrogen and silicon acts as a diffusion barrier. These intermediary layers prevent harmful hydrogen and impurity interactions with the ferroelectric layer, thereby improving device reliability without affecting ferroelectric functionality.
Solution Approach 2:
The patent converts the potentially harmful presence of hydrogen into a beneficial configuration by strategically positioning insulator layers that capture and localize hydrogen away from the ferroelectric layer. The oxygen-aluminum insulator layer acts as a hydrogen trap, converting what would be a harmful diffusing species into a contained element within a dedicated capture zone, thus protecting the ferroelectric properties.
2Reliability
If insulator layers are added to prevent hydrogen diffusion, then ferroelectric reliability is improved, but device structure complexity increases
Solution Approach 1:
The patent manages complexity by controlling the thickness parameters of the insulator layers. The oxygen-aluminum containing insulator layer is configured with a thickness of 1 nm to 10 nm, and the nitrogen-silicon containing insulator layer is configured with a thickness of 1 nm to 5 nm. By specifying narrow thickness ranges, the patent achieves effective hydrogen protection while minimizing the added structural complexity and maintaining compatibility with standard semiconductor manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances ferroelectricity by reducing hydrogen concentration in the ferroelectric layer, improving the reliability and performance of semiconductor devices by minimizing impurity effects and maintaining high crystallinity.
Implementation Method 1
the second insulator has a function of capturing or fixing hydrogen
Implementation Method 2
the third insulator has a function of inhibiting diffusion of hydrogen
Data Source
AI summary
A ferroelectric device having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor over a first insulator, a ferroelectric layer over the first conductor, a second conductor over the ferroelectric layer, a second insulator over the second conductor, and a third insulator surrounding the first conductor, the ferroelectric layer, the second conductor, and the second insulator. The second insulator has a function of capturing or fixing hydrogen, and the third insulator has a function of inhibiting hydrogen diffusion.