Non-volatile memory cell, method of fabricating non-volatile memory cell, and memory cell array thereof

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Existing non-volatile memory cells, such as FeRAM, face challenges in achieving high remnant polarization and memory window, which are crucial for improving programming voltage and storage efficiency.

Innovation Solution

The introduction of an amorphous layer with a different atomic arrangement between the top and bottom electrodes of a ferroelectric capacitor in a non-volatile memory cell, formed using an atomic layer deposition process, enhances remnant polarization and memory window.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional ferroelectric capacitor structure is used, then the device complexity is low, but the remnant polarization and memory window are insufficient

Engineering Contradiction:

Improveremnant polarizationVSAvoidcapacitor structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The capacitor structure is segmented by inserting an amorphous layer between the crystalline electrodes, dividing the原本 homogeneous structure into distinct functional layers with different atomic arrangements, thereby enhancing remnant polarization while maintaining manageable complexity

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The capacitor employs a composite structure combining crystalline electrodes with an amorphous intermediate layer, utilizing the complementary properties of both phases to achieve superior remnant polarization and memory window characteristics

Inventive Principle:

Principle #40Composite materials

2Reliability

If the atomic arrangement of electrodes is uniform, then the manufacturing process is simple, but the memory window is limited

Engineering Contradiction:

Improvememory windowVSAvoidatomic arrangement control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The amorphous layer is selectively positioned between specific electrodes with different atomic arrangements, creating local structural variations that enhance memory window while maintaining overall manufacturing feasibility through targeted rather than universal complexity

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The insertion of the amorphous layer increases the remnant polarization of the capacitor, resulting in a larger memory window of at least 0.2 V, which benefits the programming voltage and overall performance of the non-volatile memory cell.

Implementation Method 1

The amorphous layer is formed by an atomic layer deposition process

Methodology Applied

Scientific EffectAtomic layer deposition: Chemical Vapour Deposition

Data Source

PatentUS20250133745A1Non-volatile memory cell, method of fabricating non-volatile memory cell, and memory cell array thereof

Publication Date: 2025.04.24 MACRONIX INTERNATIONAL CO LTD

AI summary

A non-volatile memory cell includes a capacitor which includes a top electrode, a bottom electrode, a ferroelectric layer disposed between the top electrode and the bottom electrode, and an amorphous layer disposed between the top electrode and the bottom electrode, wherein an atomic arrangement of the amorphous layer is different from an atomic arrangement of the top electrode and the bottom electrode. A method of fabricating a non-volatile memory cell and a memory cell array thereof are also disclosed.