Ferroelectric Single-Crystal Memory With Domain-Wall Current Readout
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Solution Overview
Problem
Conventional non-destructive current readout ferroelectric memories have a small read current, leading to poor data reading ability and slow reading speed, which restricts their practical application.
Innovation Solution
A non-destructive readout ferroelectric memory with a ferroelectric single-crystal thin film layer and a specific electrode configuration that enables a large read current by creating a domain wall conductive passage between electrodes, allowing for faster and more efficient data reading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional non-destructive current readout ferroelectric memory is used, then simple preparation and low cost are achieved, but read current is small (100 to 1000 pA) leading to poor reading ability and slow reading speed
Solution Approach 1:
The patent changes the polarization direction parameter of the ferroelectric thin film from parallel to substantially perpendicular to the substrate, and configures electrodes laterally to create domain wall conductive passages. This parameter change increases read current from pA order to nA order (100-1000 nA), improving both reading ability and speed while maintaining non-destructive readout
Solution Approach 2:
The patent introduces domain walls as intermediary conductive passages between electrodes. These domain walls serve as mediators that enable large current flow during readout operations, allowing non-destructive reading with significantly enhanced current levels compared to conventional direct electrode contact methods
2Quantity of substance
If ferroelectric thin film thickness is reduced to increase storage density, then high density is achieved, but coercive voltage decreases proportionally affecting read-write voltage stability
Solution Approach 1:
The patent transitions from vertical electrode configuration to lateral electrode arrangement, creating domain wall conductive passages that extend horizontally through the ferroelectric film. This dimensional change allows the system to achieve high storage density through thin films while maintaining stable coercive voltages, as the lateral domain walls provide consistent conduction paths independent of film thickness reductions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly increases the read current to the order of 100 nA to 1000 nA, improving reading speed and data retention performance while maintaining non-destructive readout capabilities.
Implementation Method 1
Ferroelectric random access memory (FRAM) is a non-volatile memory which stores data by using two different polarization orientations of a ferroelectric domain (or referred to as 'electric domain') in an electric field
Implementation Method 2
a partial electric domain in the ferroelectric thin film layer is enabled to be reversed, thus establishing a first domain wall conductive passage which connects the first electrode with the second electrode
Data Source
AI summary
Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.