Ferroelectric Memory Structure With Stacked Electrodes For Multi-State Storage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current ferroelectric memory technologies face challenges in achieving multiple storage states within a single memory cell without increasing the cell's area, which limits their operational efficiency and versatility.
Innovation Solution
A ferroelectric memory structure comprising a substrate, a ferroelectric capacitor with alternately stacked electrodes and a dielectric layer, and a switch device, where the ferroelectric capacitor structure includes a weighting state electrode that adjusts impedance by applying voltage, enabling multiple storage states without area expansion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional ferroelectric memory structures are used, then the memory cell structure is simple, but the memory cell can only achieve single storage state
Solution Approach 1:
The capacitor structure is segmented into multiple independent electrodes (first electrode, second electrode, third electrode) that can be controlled separately. Each electrode can be independently biased to generate different electric field configurations, enabling the same physical capacitor structure to represent multiple storage states (0, 1, or 2) without requiring additional capacitor units.
Solution Approach 2:
The capacitor structure is designed to perform multiple functions: it can store data in three different states while maintaining the same physical footprint as conventional capacitors. The alternately stacked electrode configuration allows the same capacitor to serve as both a storage element and a multi-state encoding device, eliminating the need for additional structural components.
2Adaptability or versatility
If multiple storage states are achieved by increasing memory cell area, then multiple storage states are enabled, but the memory cell area increases
Solution Approach 1:
Instead of adding more capacitor units in the planar direction (increasing area), the patent utilizes the vertical dimension by stacking electrodes alternately. The multi-state capability is achieved through the third dimension (vertical stacking of first, second, and third electrodes), allowing multiple storage states to be encoded in the electric field distribution across the stacked structure rather than through lateral expansion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows a single ferroelectric memory cell to achieve multiple storage states by adjusting capacitance, enhancing operational efficiency and versatility without increasing the memory cell's area.
Implementation Method 1
a ferroelectric material layer, wherein the at least one first electrode and the first dielectric layers are alternately stacked, the second electrode penetrates through the first electrode, and the ferroelectric material layer is disposed between the first electrode and the second electrode
Implementation Method 2
a ferroelectric capacitor structure, wherein the ferroelectric capacitor structure includes at least one first electrode, first dielectric layers, a second electrode
Data Source
AI summary
A ferroelectric memory structure including a substrate, a ferroelectric capacitor structure, and a switch device is provided. The ferroelectric capacitor structure is disposed on the substrate. The ferroelectric capacitor structure includes at least one first electrode, first dielectric layers, a second electrode, and a ferroelectric material layer. The at least one first electrode and the first dielectric layers are alternately stacked. The second electrode penetrates through the first electrode. The ferroelectric material layer is disposed between the first electrode and the second electrode. The switch device is electrically connected to the ferroelectric capacitor structure.