Ferroelectric Oxide Stack for Negative-Capacitance Miniaturized Electronics
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Solution Overview
Problem
As electronic devices miniaturize, their capacitance decreases, leading to increased leakage current, necessitating the use of high dielectric constant materials to maintain performance while managing power consumption effectively.
Innovation Solution
An electronic device is designed with a ferroelectric layer comprising a first oxide layer and a second oxide layer with hafnium, where the second oxide layer has a thickness twice or more than the first, and a specific composition ratio, to enhance negative capacitance effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the electronic device is miniaturized to increase integration degree, then the device size is reduced, but the capacitance decreases
Solution Approach 1:
The patent changes the material parameter by using high-k dielectric materials (such as HfO2, ZrO2, or their composite structures) instead of conventional dielectric materials. This increases the dielectric constant (k-value) of the gate insulator, allowing the capacitance to be maintained even when the physical dimensions are reduced for miniaturization.
Solution Approach 2:
The patent employs composite material structures, specifically a dual-oxide layer configuration where a first oxide layer (e.g., ZrO2) and a second oxide layer (e.g., HfO2) are stacked together. This composite structure leverages the high dielectric constants of both materials to achieve enhanced overall capacitance while maintaining a thin total thickness for device miniaturization.
2Reliability
If the dielectric thickness is reduced to increase capacitance, then the capacitance increases, but the leakage current increases
Solution Approach 1:
The patent changes the material parameter by selecting high-k dielectric materials that provide high capacitance at reduced thicknesses. The use of materials like HfO2 and ZrO2 with their superior dielectric properties allows achieving high capacitance values without proportionally increasing leakage current, thus improving the capacitance-to-leakage ratio.
Solution Approach 2:
The stacked oxide structure creates a composite dielectric system where each layer contributes to the overall electrical performance. The first oxide layer and second oxide layer work synergistically to provide high capacitance while their combined structure offers improved barrier properties against leakage current compared to a single-layer thin dielectric.
3Loss of energy
If a ferroelectric thin film is formed for each device to implement low-power devices, then the negative capacitance effect is improved, but the device complexity increases
Solution Approach 1:
The patent utilizes the ferroelectric phase transition properties of the oxide materials to generate negative capacitance effects. By carefully controlling the composition ratios and thickness parameters of the oxide layers, the material exhibits ferroelectric behavior that enables negative capacitance, allowing for low-power device operation through reduced supply voltages and lower static power consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively improves the negative capacitance effect, reducing equivalent oxide thickness and enhancing device performance while managing power consumption, thereby addressing the challenges of miniaturization and leakage current.
Implementation Method 1
a ferroelectric layer covering the conductive material layer and having ferroelectric or antiferroelectric properties
Implementation Method 2
improve a negative capacitance effect by using the ferroelectric thin film
Data Source
AI summary
An electronic device and an electronic apparatus including the electronic device are provided. The electronic device includes a conductive material layer, and a ferroelectric layer covering the conductive material layer. The ferroelectric layer includes a first oxide layer including a first component, and a second oxide layer including hafnium and a second component and having a thickness that is twice or more than a thickness of the first oxide layer.