Ferroelectric RESURF Junction Termination for High-Voltage Breakdown
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Solution Overview
Problem
Current high voltage semiconductor devices face challenges with complex processes, large size, high cost, and increased on-resistance due to conventional junction termination protection structures, which hinder efficient voltage blocking and current conduction.
Innovation Solution
A high voltage semiconductor device incorporating a combined junction termination protection structure with a RESURF (Reduced Surface Field) structure, featuring a ferroelectric material layer and biasing field plates, which reduces surface electric fields and enhances breakdown voltage while minimizing device size and on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional junction termination protection structures (JTE, FLR, DT2, FP, FFP, VLD) are used to raise breakdown voltage, then the blocking voltage is improved, but the device area increases and on-resistance increases
Solution Approach 1:
The patent applies parameter changes by introducing a ferroelectric material layer that undergoes polarization state changes. The ferroelectric layer can switch between different polarization states to dynamically adjust the electric field distribution at the junction termination, thereby raising breakdown voltage without proportionally increasing device area. The polarization switching allows the structure to adapt its electrical characteristics based on operating conditions.
Solution Approach 2:
The patent employs composite materials by combining ferroelectric material with conventional semiconductor structures. The ferroelectric layer is integrated with the junction termination structure to create a composite system that leverages the high dielectric constant and polarization properties of ferroelectric materials to enhance voltage blocking capability while maintaining compact dimensions.
2Reliability
If conventional junction termination protection structures are used to raise breakdown voltage, then the blocking voltage is improved, but the manufacturing process becomes complex and cost increases
Solution Approach 1:
The patent simplifies manufacturing by using parameter changes in the ferroelectric material's polarization state rather than requiring complex multi-layer conventional termination structures. The ferroelectric layer can be processed using standard thin-film deposition techniques, and its polarization can be controlled through simple electric field application, reducing process complexity compared to multiple doping and structuring steps required for conventional approaches.
3Reliability
If conventional junction termination protection structures are used to raise breakdown voltage, then the blocking voltage is improved, but the on-resistance increases
Solution Approach 1:
The patent addresses on-resistance increase through parameter changes in the ferroelectric material's polarization state. By switching the ferroelectric layer between different polarization states, the structure can optimize its electrical characteristics - maintaining high breakdown voltage in blocking mode while reducing effective resistance in conducting mode. The polarization switching allows dynamic adaptation to operational requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively raises breakdown voltage, reduces on-resistance, and allows for miniaturization of the device, while simplifying the manufacturing process by integrating ferroelectric materials through deposition and etching steps.
Implementation Method 1
a ferroelectric material layer positioned below the first biasing field plate and in contact with the first biasing field plate
Data Source
AI summary
The present invention provides a high voltage semiconductor device comprising a combined junction terminal protection structure, the device comprises: an active area formed with the high voltage semiconductor device; a combined junction terminal protection structure having a RESURF (Reduced Surface Field) structure, the RESURF structure comprising a first biasing field plate electrically connecting to the active area and a ferroelectric material layer positioned below the first biasing field plate and in contact with the first biasing field plate. The high voltage semiconductor device structure may further assist in raising breakdown voltage (BV) of the device and meanwhile effectively reduce on-resistance (Ron) of the device compared with current junction terminal protection structure, and then miniaturization of the device structure may be fulfilled more easily. Further, the process may be performed easily because only common deposition and patterning processes of Hf-oxide ferroelectric layer should be added to current process.