Ferroelectric Dielectric Thin Film with Uniform Sub-Cycle Doping
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Solution Overview
Problem
Existing technologies face challenges in achieving uniform doping concentrations of dopants in dielectric material layers for electronic devices, particularly in metal-insulator-metal capacitors and metal-oxide semiconductor transistors, which are crucial for miniaturized, high-performance electronic circuits, due to the nature of atomic layer deposition methods.
Innovation Solution
A thin film structure is developed with a dielectric material layer having a ferroelectric property, achieved by doping a matrix material with a fluorite structure using a sub-cycle doping process during atomic layer deposition, ensuring a uniform concentration of dopants through sequential injection cycles of precursors and oxidants, resulting in improved thickness uniformity and ferroelectric properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If atomic layer deposition method is used to form dielectric material layer, then thin film structure can be formed with controlled thickness, but uniform doping concentration of dopants cannot be achieved
Solution Approach 1:
The atomic layer deposition process is segmented into multiple sub-cycles, where each sub-cycle deposits a portion of the dopant. This segmentation allows the dopant to be distributed uniformly throughout the dielectric material layer thickness, achieving both controlled thickness and uniform doping concentration that cannot be obtained through conventional single-cycle deposition methods.
2Volume of moving object
If dielectric material layer thickness is reduced for miniaturized electronic circuits, then device size is reduced, but ferroelectric operating characteristics deteriorate
Solution Approach 1:
The invention changes the doping concentration parameter through controlled sub-cycle deposition, enabling thin dielectric material layers (5nm to 20nm) to exhibit ferroelectric characteristics. By precisely controlling the dopant concentration in each sub-cycle, the patent achieves ferroelectricity in ultra-thin films that would otherwise fail to demonstrate adequate operating characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of a dielectric material layer with uniform doping concentrations, enhancing the ferroelectric properties and endurance of electronic devices, suitable for applications in nonvolatile memory devices, neuromorphic devices, and capacitors, with improved durability and performance.
Implementation Method 1
The matrix material of the dielectric material layer may be formed by atomic layer deposition
Implementation Method 2
the matrix material of the dielectric material layer may be formed by the atomic layer deposition through sequential injection cycles of a precursor and an oxidant
Data Source
AI summary
Disclosed are a thin film structure and an electronic device including the same. The disclosed thin film structure includes a dielectric material layer between a first material layer and a second material layer. The dielectric material layer includes a dopant in a matrix material having a fluorite structure. The dielectric material layer is uniformly doped with a low concentration of the dopant, and has ferroelectricity.