Ferroelectric Field Effect Transistor Gate Construction for Data Retention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current memory technologies face challenges in efficiently storing and retaining multiple data states in memory cells, particularly in volatile memory which requires frequent refreshing and lacks efficient use of ferroelectric materials in field-effect transistors.
Innovation Solution
The development of ferroelectric field effect transistors (FeFETs) with a gate construction comprising ferroelectric materials, inner and outer conductive materials, and dielectric layers, arrayed in row and column lines, allowing for programmable charge storage and stable polarization states for enhanced data retention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of stationary object
If conventional volatile memory is used, then frequent refreshing is required to retain data, but data retention capability deteriorates
Solution Approach 1:
The patent changes the electrical parameter (threshold voltage) of the transistor by utilizing ferroelectric material polarization states. The ferroelectric layer in the gate construction provides stable polarization states that correspond to different threshold voltage levels, enabling non-volatile data storage without requiring frequent refreshing operations.
Solution Approach 2:
The patent employs a composite gate construction comprising multiple materials including ferroelectric material, conductive materials, and dielectric layers. This composite structure combines the charge storage capability of ferroelectric materials with the electrical control functions of conductive and dielectric materials to achieve both non-volatile storage and transistor switching functionality.
2Quantity of substance
If ferroelectric materials are integrated into field-effect transistors, then multiple data states can be stored, but device construction complexity increases
Solution Approach 1:
The gate construction is segmented into distinct functional layers: ferroelectric material layer for charge storage, inner conductive material for electrical contact, outer conductive material for gate control, and dielectric layers for insulation. This segmentation allows each layer to perform its specific function while maintaining overall device manageability and manufacturability.
Solution Approach 2:
The ferroelectric field-effect transistor structure serves multiple functions: the ferroelectric layer provides non-volatile charge storage, the conductive materials enable electrical control and contact, and the dielectric layers provide insulation. This multi-functional integration allows a single device structure to achieve both memory storage and transistor switching capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient storage and retrieval of multiple data states with improved data retention in memory cells, reducing the need for frequent refreshing and optimizing the use of ferroelectric materials in field-effect transistors.
Implementation Method 1
at least some portion of the gate construction comprises ferroelectric material. Such materials are characterized by two stable polarized states. These different states in field effect transistors may be characterized by different threshold voltage (Vt) for the transistor or by different channel conductivity for a selected operating voltage.
Data Source
AI summary
A ferroelectric field effect transistor comprises a semiconductive channel comprising opposing sidewalls and an elevationally outermost top. A source/drain region is at opposite ends of the channel. A gate construction of the transistor comprises inner dielectric extending along the channel top and laterally along the channel sidewalk. Inner conductive material is elevationally and laterally outward of the inner dielectric and extends along the channel top and laterally along the channel sidewalk. Outer ferroelectric material is elevationally outward of the inner conductive material and extends along the channel top. Outer conductive material is elevationally outward of the outer ferroelectric material and extends along the channel. Other constructions and methods are disclosed.