Ferroelectric Structure True Random Number Generation
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Solution Overview
Problem
Current random number generators, particularly CMOS-based pseudo random number generators, are complex and limited in their ability to generate true random numbers, making them vulnerable to hacking and unsuitable for the growing demands of the IoT industry.
Innovation Solution
A ferroelectric structure is developed, comprising a substrate, a lower electrode, a ferroelectric layer made of a two-dimensional material like molybdenum disulfide (MoS2), and an upper electrode. This structure generates random current values of varying intensities when the same voltage is applied multiple times, enabling true random number generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a CMOS-based pseudo random number generator is used, then random number generation is achieved, but the device complexity increases and reliability decreases due to vulnerability to hacking
Solution Approach 1:
The patent extracts the random number generation function from complex CMOS circuits and algorithms, implementing it using only the inherent physical properties of a simple ferroelectric capacitor. By taking out the algorithmic complexity and relying solely on the ferroelectric material's random polarization switching, the system achieves high security with minimal device complexity
Solution Approach 2:
The ferroelectric capacitor generates true random numbers through its own intrinsic physical properties - the random switching of polarization states under electric field. The system serves itself by utilizing the natural stochastic behavior of ferroelectric domain switching, eliminating the need for external complex circuitry or algorithms to generate randomness
2Reliability
If a true random number generator using ferroelectric material is implemented, then reliability and security are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs parameter changes in the form of post-deposition annealing treatment to transform the ferroelectric layer's properties. By controlling annealing temperature and atmosphere, the system achieves the desired ferroelectric characteristics with relaxed initial deposition precision requirements, resolving the contradiction between manufacturing ease and device performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ferroelectric structure effectively implements a true random number generator as a single device, enhancing data security through robust encryption key generation and simulation data generation, while also being applicable to solar cells and non-volatile RF switches.
Implementation Method 1
a ferroelectric layer disposed on the lower electrode and comprising a two-dimensional ferroelectric material
Implementation Method 2
current values having mutually different intensities are generated according to a same voltage being applied
Data Source
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AI summary
Provided is a ferroelectric structure. The ferroelectric structure includes: a substrate; a lower electrode disposed on the substrate; a ferroelectric layer disposed on the lower electrode and including a two-dimensional ferroelectric material; and an upper electrode disposed on the ferroelectric layer, in which a current value of random intensity is obtained for the same voltage being applied.