Ferromagnetic Gate Semiconductor Memory Device
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Solution Overview
Problem
Conventional semiconductor memory devices, such as DRAM and SRAM, occupy significant space due to their requirements for field effect transistors and charge storage capacitors, necessitating a more compact memory solution.
Innovation Solution
A semiconductor memory device with a ferromagnetic gate is developed, where the ferromagnetic gate is programmed and magnetized by electrical current passing through a semiconductor nanowire, allowing for magnetization direction detection through changes in threshold voltage or channel resistance, enabling a compact memory storage mechanism.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional memory devices (DRAM/SRAM) are used to store data, then data storage function is achieved, but significant space is occupied
Solution Approach 1:
The patent combines the storage node and control gate into a single three-dimensional crosspoint structure. The storage node extends vertically through multiple memory layers, while control gates are positioned at different heights to enable independent control of single bit lines, achieving high-density storage without requiring separate capacitor and transistor components for each memory cell
Solution Approach 2:
The patent transitions from planar two-dimensional memory cell layouts to a three-dimensional architecture where storage nodes extend vertically through multiple layers. This vertical stacking approach allows multiple memory cells to be stacked above a single bit line, dramatically increasing storage density while reducing the footprint area
2Area of stationary object
If a compact memory structure is implemented, then space is reduced, but device complexity increases
Solution Approach 1:
The patent divides the memory structure into discrete modular units consisting of storage nodes, control gates, and bit lines organized in a crosspoint array. Each intersection point represents an independent memory cell that can be addressed individually, allowing the complex three-dimensional structure to be managed through systematic segmentation into repeatable units
Solution Approach 2:
The control gates serve multiple functions: they act as both the control electrode for selecting memory cells and as part of the read/write signal transmission path. The storage nodes simultaneously serve as both data storage elements and as conductive pathways for signal transmission, reducing the need for separate dedicated components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides a compact memory device that utilizes the magnetization of a ferromagnetic gate to store data, reducing the physical space requirements and enhancing storage efficiency by leveraging changes in electrical current and resistance for data detection.
Implementation Method 1
The ferromagnetic gate structure can be magnetized by passing electrical current along a lengthwise direction of the semiconductor nanowire
Implementation Method 2
The orientation of the magnetization in the ferromagnetic gate can be detected by changes in the threshold voltage of a field effect transistor employing the ferromagnetic gate as a gate electrode, or can be detected by the resistance of the channel region that changes with the orientation of the magnetization in a two terminal device
Data Source
AI summary
A semiconductor memory device including a channel region and a ferromagnetic gate is provided. The channel region can be formed within a semiconductor nanowire. The ferromagnetic gate is programmed with a selected orientation of magnetization by the electrical current that passes through the channel region in one direction or another. The orientation of the magnetization in the ferromagnetic gate can be detected by changes in the threshold voltage of a field effect transistor employing the ferromagnetic gate as a gate electrode, or can be detected by the resistance of the channel region that changes with the orientation of the magnetization in a two terminal device.