Ferromagnetic Memory Device Multi-Domain State Storage
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Solution Overview
Problem
Conventional magnetic memory devices have complex structures, leading to difficulties in manufacturing and reduced productivity, and they store only a small amount of data despite their complexity, with limited data storage capacity and slow processing speed.
Innovation Solution
A magnetic memory device using a ferromagnetic material with a stable multi-domain state, employing a planar hall effect or magneto-resistance to store and read data, featuring a simple structure with a single or multi-domain state, and utilizing a ferromagnetic layer with bi-axial anisotropy to achieve four distinct data states per cell through the application of an external magnetic field.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional MRAM device uses multiple magnetic layers forming spin valves, then sensing function is achieved, but structure becomes complicated and manufacturing difficulty increases
Solution Approach 1:
The patent merges the sensing layer and storage layer into a single ferromagnetic layer, eliminating the need for separate spin valve structures. The ferromagnetic layer simultaneously performs both sensing and storage functions by utilizing its magnetization state, thereby simplifying the device structure while maintaining the essential sensing capability.
Solution Approach 2:
The ferromagnetic layer is designed to serve multiple functions: it acts as both the sensing element (detecting magnetic field changes) and the storage element (maintaining magnetization states for data storage). This multi-functional design eliminates the need for separate specialized layers, reducing structural complexity.
2Reliability
If conventional MRAM device uses multiple magnetic layers, then sensing capability is provided, but manufacturing process becomes difficult and productivity deteriorates
Solution Approach 1:
By combining the sensing and storage functions into a single ferromagnetic layer, the number of deposition and patterning steps is reduced. This merging eliminates the need to manufacture multiple thin magnetic layers with precise thickness control and interface quality, thereby improving manufacturing efficiency and productivity.
3Device complexity
If conventional MRAM device stores 1 bit data per cell, then structure is maintained, but storage capacity remains limited
Solution Approach 1:
The patent utilizes multi-stable magnetization states of the ferromagnetic layer to encode multiple bits of data per cell. By controlling the magnetization direction and magnitude to achieve distinct stable states (e.g., parallel, anti-parallel, and intermediate states), the device can store 2 bits or more per cell while maintaining a simple single-layer structure, thereby increasing storage capacity without increasing structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables increased storage capacity and processing speed by simplifying the manufacturing process and allowing four data states to be stored in one cell, improving data reading and writing efficiency with a single ferromagnetic semiconductor layer, compared to traditional spin valve structures.
Implementation Method 1
The planar hall effect or magneto-resistance is used to measure multi-domain states so as to read data stored in a multi-level state
Implementation Method 2
The planar hall effect or magneto-resistance is used to measure multi-domain states so as to read data stored in a multi-level state
Implementation Method 3
writes information data by external magnetic field generated by extra metal wires
Implementation Method 4
applied current along word lines and a variation of resistance due to the magnetization directions of the two magnetic layers is sensed
Data Source
AI summary
Disclosed is a memory device using a multi-domain state of a semiconductor material, and more particularly to a magnetic memory device, in which a ferromagnetic layer for recording magnetic data serves as a sensing layer so as to have a simple structure, shorten a manufacturing process, and reduce the unit cost of production. The planar hall effect or magneto-resistance is used to measure multi-domain states so as to read data stored in a multi-level state.