Ferromagnetic Rod Insert for Group III-Nitride Semiconductor Heat Dissipation
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Solution Overview
Problem
Existing semiconductor light emitting devices face challenges with heat dissipation and electrical connectivity, particularly due to thermal expansion issues with plated metal connections, leading to defects and increased manufacturing costs, as well as parasitic capacitance and cracking in high-temperature environments.
Innovation Solution
A template with a growth substrate featuring grooves for insert placement, where a ferromagnetic rod or wire insert is used for enhanced thermal and electrical conductivity, secured by a fixation substance, allowing for improved heat dissipation and electrical connectivity without the limitations of plated connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plated metal connections are used for electrical connectivity, then electrical connection is achieved, but thermal expansion causes defects and increased manufacturing costs
Solution Approach 1:
The patent extracts the harmful plated metal connection layer from the structure and replaces it with a ferromagnetic rod insert that extends through the substrate. This removes the source of thermal expansion defects while maintaining electrical connectivity through the ferromagnetic material's inherent conductivity.
Solution Approach 2:
The patent changes the material parameter from plated metal (with high thermal expansion) to ferromagnetic rod material (with stable physical properties and low thermal expansion). This parameter change eliminates thermal expansion defects while maintaining or improving electrical connectivity and heat dissipation.
2Temperature
If plated connections are used for heat dissipation, then thermal conductivity is achieved, but thermal expansion leads to cracking in high-temperature environments
Solution Approach 1:
The patent removes the plated connection layer that causes thermal expansion cracking and replaces it with a ferromagnetic rod insert. This insert provides superior thermal conductivity and heat dissipation without the thermal expansion issues that cause cracking in high-temperature environments.
Solution Approach 2:
The patent uses a ferromagnetic rod material that combines multiple desirable properties: high thermal conductivity for heat dissipation, electrical conductivity for connectivity, and stable physical properties (low thermal expansion) to prevent cracking. This composite approach replaces the plated metal structure with a more robust material.
3Ease of manufacture
If conventional growth substrate structure is used, then manufacturing simplicity is maintained, but heat dissipation and electrical connectivity are insufficient
Solution Approach 1:
The ferromagnetic rod insert is placed into the growth substrate before the semiconductor layers are grown. This preliminary action allows the insert to be integrated into the device structure during the growth process itself, eliminating the need for separate post-manufacturing steps to install heat dissipation or electrical connection components.
Solution Approach 2:
The ferromagnetic rod insert performs multiple functions simultaneously: it provides heat dissipation through high thermal conductivity, electrical connectivity through electrical conductivity, and structural stability through low thermal expansion. This multi-functional component replaces what would traditionally require multiple separate elements (heat sink, electrical connection, mechanical support).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances thermal conductivity and electrical connectivity, reduces defects and manufacturing costs, and maintains stable physical properties in high-temperature environments, preventing cracking and parasitic capacitance.
Implementation Method 1
an insert for heat dissipation placed and secured in the groove
Implementation Method 2
a ferromagnetic rod or wire insert is used for enhanced thermal and electrical conductivity
Data Source
AI summary
A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.