Fin-Type FET Buffer Oxidation Blocking Layer

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Solution Overview

Problem

The increasing demand for high reliability and multi-functional semiconductor devices has led to more complex structures and miniaturization, which poses challenges in maintaining device isolation and oxidation control, particularly in fin-type field effect transistors, where existing technologies struggle to effectively manage oxidation rates and layer densities.

Innovation Solution

The implementation of a fin structure with a buffer semiconductor pattern and a channel pattern having different lattice constants, combined with a device isolation structure that includes a gap-fill insulating layer and an oxidation blocking layer pattern, where the oxidation blocking layer is denser than the buffer oxide layer and has a thinner thickness, to control oxidation and enhance device performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a buffer semiconductor pattern with high oxidation rate is used to achieve lattice mismatch compensation, then device isolation control becomes difficult, but device functionality is improved

Engineering Contradiction:

Improvelattice mismatch compensationVSAvoidoxidation control

Core Design Contradiction:

Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

An oxidation blocking layer pattern is introduced as an intermediary between the buffer semiconductor pattern and the gap-fill insulating layer. This blocking layer prevents oxygen from the insulating layer from diffusing into the buffer semiconductor, thereby controlling oxidation while allowing the buffer to maintain its high oxidation rate properties for lattice mismatch compensation

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The oxidation blocking layer is applied selectively only in regions where the buffer semiconductor pattern contacts the gap-fill insulating layer, rather than uniformly across the entire device. This localized application prevents oxidation at critical interfaces while preserving the functional properties of the buffer semiconductor in other regions

Inventive Principle:

Principle #3Local quality

2Ease of manufacture

If device isolation structure is simplified to reduce manufacturing complexity, then manufacturing ease improves, but oxidation blocking effectiveness deteriorates

Engineering Contradiction:

Improvedevice isolation structure fabricationVSAvoidoxidation blocking

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The device isolation structure is segmented into distinct functional layers: a buffer oxide layer pattern for initial oxidation control and an oxidation blocking layer pattern for enhanced oxidation prevention. This segmentation allows each layer to be optimized for its specific function while maintaining overall manufacturing feasibility

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The device isolation structure uses composite material composition with the buffer oxide layer (providing initial oxidation resistance) and the oxidation blocking layer (providing enhanced oxidation prevention). This composite structure achieves superior oxidation blocking effectiveness while remaining compatible with existing manufacturing processes

Inventive Principle:

Principle #40Composite materials

3Reliability

If gap-fill insulating layer is applied thickly to ensure complete filling, then isolation effectiveness improves, but oxidation diffusion to buffer semiconductor increases

Engineering Contradiction:

Improvedevice isolationVSAvoidoxidation diffusion

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The oxidation blocking layer pattern serves as a mediator between the gap-fill insulating layer and the buffer semiconductor pattern. It allows the insulating layer to be applied with sufficient thickness for complete filling and effective isolation, while simultaneously preventing oxidation diffusion to the buffer semiconductor

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively manages oxidation rates and layer densities, improving the reliability and functionality of semiconductor devices by preventing unwanted oxidation and ensuring precise device isolation, thereby enhancing the performance and integration of fin-type field effect transistors.

Implementation Method 1

an oxidation blocking layer pattern disposed between the buffer semiconductor pattern and the gap-fill insulating layer

Methodology Applied

Scientific EffectOxidation blocking: Diffusion Barrier

Data Source

PatentUS9287401B2Semiconductor device having fin-type field effect transistor and method of manufacturing the same

Publication Date: 2016.03.15 SAMSUNG ELECTRONICS CO LTD

AI summary

A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel pattern disposed on the buffer semiconductor pattern, wherein the buffer semiconductor pattern has a lattice constant different from that of the channel pattern, and wherein the device isolation structure includes a gap-fill insulating layer, and includes an oxidation blocking layer pattern disposed between the buffer semiconductor pattern and the gap-fill insulating layer.