3D FET Fin Width Control via Hydrogen Reflow
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Solution Overview
Problem
Three-dimensional semiconductor structures, such as FinFETs, face challenges in fabricating devices with varying device widths due to the quantization of fin dimensions, which affects device characteristics and scalability.
Innovation Solution
A method involving a hydrogen atmosphere treatment to reflow and shape three-dimensional fins on a semiconductor substrate, allowing for the formation of fins with different device widths by applying a masking material and controlling the hydrogen bake conditions, enabling the formation of gates that wrap around the fins with distinct circumferential contact widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional planar fabrication methods are used to create three-dimensional fins, then manufacturing process simplicity is maintained, but device width variation precision deteriorates due to quantization of fin dimensions
Solution Approach 1:
The patent changes the physical-chemical parameters of the fin structure by applying hydrogen atmosphere treatment at specific temperatures and pressures. This causes the fin material to reflow and change shape, transforming the discrete quantized fin dimensions into continuously variable device widths. The hydrogen treatment modifies the material properties temporarily to enable shape transformation, then allows re-solidification with new dimensions.
Solution Approach 2:
The patent replaces traditional mechanical lithographic patterning methods with a chemical-physical reflow process. Instead of using photolithography and etching to define fin dimensions, the invention uses hydrogen atmosphere treatment to cause the fin material to spontaneously reflow into desired shapes, substituting chemical-physical effects for mechanical fabrication steps.
2Manufacturing precision
If fins with different device widths are fabricated using conventional methods, then device diversity is achieved, but control over short channel effects deteriorates due to manufacturing tolerances
Solution Approach 1:
The patent applies local quality by using masking materials to selectively protect specific regions of fins during hydrogen treatment. Different portions of the fin structure receive different treatments, allowing precise local control over device width. This enables each fin to have customized dimensions optimized for specific device characteristics while maintaining overall structure integrity.
Solution Approach 2:
The patent performs preliminary action by applying masking materials to fins before the hydrogen atmosphere treatment. This pre-positioning of masks defines which areas will be modified and which will remain unchanged, allowing precise control over the final device width distribution. The masking step prepares the structure in advance for the reflow process.
3Productivity
If three-dimensional FinFET structures are adopted to improve scalability, then device density increases, but fabrication flexibility deteriorates due to quantization of fin dimensions
Solution Approach 1:
The patent introduces dynamics by making the fin dimensions adjustable after the initial structure formation. The hydrogen atmosphere treatment allows the fins to dynamically change shape and size in response to processing conditions. This transforms static, quantized dimensions into dynamic, continuously可调 parameters that can be optimized for different device requirements.
Solution Approach 2:
The patent performs preliminary structure formation to create the three-dimensional FinFET architecture with high density, then subsequently applies hydrogen treatment to adjust individual fin dimensions. This two-stage approach first achieves high device density through vertical structuring, then provides fabrication flexibility through controlled dimensional adjustment of individual fins.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the production of three-dimensional FET devices with significantly different device widths, improving device characteristics and enabling more precise control over short channel effects, enhancing scalability and performance beyond traditional manufacturing tolerances.
Implementation Method 1
applying a hydrogen atmosphere to the substrate and exposed second fin for a first predetermined time at a first predetermined temperature and pressure, the hydrogen atmosphere causing the exposed second fin to reflow and change shape
Data Source
AI summary
A three dimensional FET device structure which includes a plurality of three dimensional FET devices. Each of the three dimensional FET devices include an insulating base, a three dimensional fin oriented perpendicular to the insulating base, a gate dielectric wrapped around the three dimensional fin and a gate wrapped around the gate dielectric and extending perpendicularly to the three dimensional fin, the three dimensional fin having a device width being defined as the circumference of the three dimensional fin in contact with the gate dielectric. At least a first of the three dimensional FET devices has a first device width while at least a second of the three dimensional FET devices has a second device width. The first device width is different than the second device width. Also included is a method of making the three dimensional FET device structure.