High-Side Power FET Gate Sense Circuit for Buck Regulators

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Solution Overview

Problem

Existing sensing circuits for buck regulators are slow and inaccurate due to the delay introduced by level-shifting circuitry when sensing the gate-source voltage of high-side power FETs, which can lead to shoot-through issues.

Innovation Solution

A gate sense circuit that couples the gate sense signal directly to the high-side gate without the need for level shifting, utilizing a switching circuit with MOSFET switches and positive feedback loops to achieve fast and accurate signal propagation, reducing propagation delay to less than 1 ns.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If level-shifting circuitry is used to sense the gate-source voltage of the high-side FET, then the sense signal can be brought down to the low-voltage domain for processing, but the propagation delay increases significantly

Engineering Contradiction:
Improvesense signal accuracyVSAvoidpropagation delay
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent introduces an intermediary sense circuit that couples to the gate of the high-side FET and generates a sense signal that directly follows the gate voltage. This intermediary circuit acts as a mediator between the high-side FET gate and the low-side FET control, eliminating the need for slow level-shifting circuitry while maintaining signal accuracy and reducing propagation delay to less than 1 ns.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If the low-side FET is made to turn on earlier to compensate for level-shifting delay, then the dead time is reduced, but the accuracy is compromised and shoot-through may occur

Engineering Contradiction:
Improveswitching speedVSAvoidshoot-through prevention
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent implements a feedback mechanism where the sense circuit continuously monitors the gate voltage of the high-side FET and provides real-time feedback to the control circuit. This feedback allows the control circuit to accurately determine when the high-side FET turns off, enabling precise timing for low-side FET activation without premature turning on, thus preventing shoot-through while maintaining fast switching.

Inventive Principle:
Principle #23Feedback

3Measurement precision

If the sense circuit operates in the high-voltage domain, then the signal accuracy is maintained, but additional level-shifting circuitry is required

Engineering Contradiction:
Improvesense signal accuracyVSAvoidcircuit complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent extracts the level-shifting function from the sense circuit by having the sense circuit generate a sense signal that directly follows the gate voltage transitions. The sense circuit takes out the complexity of level-shifting circuitry by using a simplified configuration that couples to the gate and produces a voltage-following signal, eliminating the need for separate level-shifting stages and reducing overall circuit complexity.

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentUS9923454B2Fast high-side power FET gate sense circuit for high voltage applications
Publication Date: 2018.03.20 TEXAS INSTRUMENTS INC
  • US9923454B2 patent drawing
  • US9923454B2 patent drawing
  • US9923454B2 patent drawing

AI summary

A circuit for sensing gate voltage of a power FET. A switching circuit includes a switching FET having a high voltage rating, its drain coupled to the gate of the power FET, and its source coupled to an output node. A first feedback loop is coupled to the gate of the switching FET to facilitate sensing rising gate voltage. A second feedback loop is coupled to the gate of the switching FET to facilitate sensing falling gate voltage.