Back-to-Back FET Isolation for Fast, Low-Noise NMR Switching

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Solution Overview

Problem

Traditional relay switches in NMR systems, such as those used in Surface NMR, generate noise and have slow activation times, which interfere with signal measurements and prolong the dead-time before signals can be recorded, necessitating a more effective switching mechanism for selectively isolating circuit elements.

Innovation Solution

The implementation of solid-state switches, specifically back-to-back field effect transistors (FETs) with isolated gate drive electronics, to decouple and recouple circuit elements during high-voltage transmit stages, reducing noise and enabling faster switching times.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If relay switches are used to decouple circuit elements, then high standoff voltage is achieved, but switching noise and slow activation time occur

Engineering Contradiction:
Improvestandoff voltageVSAvoidswitching noise
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent replaces mechanical relay switches with solid-state field effect transistors (FETs) configured as switches. This substitution eliminates the mechanical moving parts that generate switching noise and ringing, while maintaining the ability to achieve high voltage standoff through proper FET configuration and gate control. The solid-state nature of FETs provides noise-free switching compared to mechanical relays.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the operational parameters by using FETs with appropriate voltage ratings and configuring them in series or parallel arrangements to achieve the required standoff voltage. By controlling the gate-source voltage of the FETs, the patent enables fast switching transitions without the noise associated with mechanical relay activation, thus improving both noise performance and switching speed while maintaining voltage isolation.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If relay switches are used to decouple circuit elements, then circuit isolation is achieved, but activation time is slow

Engineering Contradiction:
Improvecircuit isolationVSAvoidactivation time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent replaces mechanical relay switches with solid-state field effect transistors (FETs) configured as switches. This substitution eliminates the mechanical moving parts that generate switching noise and ringing, while maintaining the ability to achieve high voltage standoff through proper FET configuration and gate control. The solid-state nature of FETs provides noise-free switching compared to mechanical relays.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the operational parameters by using FETs with appropriate voltage ratings and configuring them in series or parallel arrangements to achieve the required standoff voltage. By controlling the gate-source voltage of the FETs, the patent enables fast switching transitions without the noise associated with mechanical relay activation, thus improving both noise performance and switching speed while maintaining voltage isolation.

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If relay switches are used, then switching mechanism is simple, but dead-time after transmit pulse is prolonged

Engineering Contradiction:
Improveswitching mechanismVSAvoiddead-time
Core Design Contradiction:
Device complexityVSLoss of time

Solution Approach 1:

The patent implements preliminary action by pre-charging the gate capacitance of the FETs through dedicated gate drive circuits before the actual switching event. This ensures that when the switching signal is applied, the FETs transition rapidly between states, minimizing the dead-time period after the transmit pulse. The gate drive electronics are prepared in advance to enable immediate response when switching is required.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent optimizes switching speed by carefully selecting FETs with low input capacitance and high transconductance, and by configuring gate drive circuits that can deliver high peak currents to charge and discharge the gate capacitance rapidly. These parameter optimizations reduce the switching transition time, thereby minimizing the dead-time period while maintaining circuit isolation integrity.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution provides low-noise, fast, and reliable isolation of circuit elements, reducing interference and shortening the dead-time, thereby improving the accuracy and efficiency of NMR signal recording in NMR systems.

Implementation Method 1

A first solid-state switch, e.g., by a first pair of back-to-back field effect transistors (FETs) with gate drive electronics, and can be adapted to selectively decouple the first electrical connection

Methodology Applied
Scientific EffectField effect transistor operation:

Data Source

PatentUS12066588B2Selective solid-state isolation of NMR circuit elements using back-to-back field effect transistors
Publication Date: 2024.08.20 VISTA CLARA
  • US12066588B2 patent drawing
  • US12066588B2 patent drawing
  • US12066588B2 patent drawing

AI summary

Nuclear Magnetic Resonance (NMR) electronics that employ selective solid-state isolation of circuit elements can include solid-state switches, such as back-to-back Field Effect Transistor (FET) pairs, and isolated gate drive electronics adapted to operate the solid-state switches in order to selectively decouple induction coils from receive electronics. The solid-state switches can be placed in series to achieve higher standoff voltages, and can be configured for low on resistance and short switching times. The gate drive electronics can include electrical isolation components adapted to enhance standoff voltages and reduce electrical noise at the selectively isolated receive electronics.