FET Plasma Wave Radiation Management
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Solution Overview
Problem
Current technologies face limitations in managing terahertz and microwave radiation due to the need for non-symmetrical boundary conditions and inefficient antenna structures for coupling plasma waves, which are essential for practical plasma wave devices.
Innovation Solution
A deep submicron field effect transistor (FET) is used to manage terahertz and microwave radiation by exciting plasma waves, allowing for symmetrical plasma mode operation and efficient coupling without requiring asymmetrical boundary conditions, utilizing channel contacts and edge contacts to tune and detect radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If antenna structures are used to couple plasma waves and electronic waves, then coupling efficiency is improved, but device size increases significantly
Solution Approach 1:
The patent extracts the coupling function from separate antenna structures and integrates it directly into the field effect transistor channel. The channel itself serves as the coupling medium between plasma waves and electronic waves, eliminating the need for external antenna structures and thereby reducing device size while maintaining coupling efficiency.
Solution Approach 2:
The patent merges the coupling function with the transistor channel structure. By combining the plasma wave interaction region and the electronic wave transmission path into a single integrated channel structure, the device achieves efficient coupling without requiring separate antenna components, thus reducing overall device volume.
2Adaptability or versatility
If non-symmetrical boundary conditions are used for plasma wave operation, then device functionality is achieved, but device complexity increases
Solution Approach 1:
The patent deliberately introduces asymmetry through the gate structure configuration. The gate is positioned asymmetrically relative to the channel, creating non-symmetrical boundary conditions that enable plasma wave operation. This controlled asymmetry provides the necessary device functionality while maintaining a relatively simple overall structure.
Solution Approach 2:
The patent employs dynamic control through gate voltage adjustment to manage plasma wave behavior. By dynamically modulating the gate voltage, the device can control plasma wave generation, detection, and manipulation without requiring complex static structural modifications, thereby achieving functionality with manageable complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient generation, detection, and manipulation of terahertz and microwave radiation by using symmetrical plasma modes, overcoming previous limitations and achieving effective coupling with terahertz radiation.
Implementation Method 1
Plasma wave oscillations (which are oscillations of electron density in time and space) and their possible uses continue to be explored. The invention uses plasma waves to manage terahertz and/or microwave radiation.
Implementation Method 2
The frequency of the radiation managed by the device can be tuned/adjusted by applying a bias voltage to, for example, the gate of the FET.
Data Source
AI summary
A device and method for managing terahertz and/or microwave radiation are provided. The device can comprise one or more field effect transistors (FETs) that each include at least one channel contact to a central region of the device channel of the FET. The frequency of the radiation managed by the device can be tuned/adjusted by applying a bias voltage to the FET. The radiation can be impinged on the device, and can be detected by measuring a voltage that is induced by the radiation. Further, the device can generate terahertz and/or microwave radiation by, for example, inducing a voltage between two edge contacts on either side of the device channel and applying the voltage to the channel contact.