Auxiliary Power Supply FET Switchover Failure Detection
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Solution Overview
Problem
Existing electrical storage apparatuses for auxiliary power supplies lack reliability in judging failures in the switchover circuit, leading to unstable operation of loads during battery voltage drops, particularly in vehicles with idling stop functions.
Innovation Solution
An electrical storage apparatus with a controller that uses a combination of Field Effect Transistors (FETs) and diodes, along with a voltage detector, to monitor and judge open-circuit and short-circuit failures by detecting voltage thresholds at specific connection points, ensuring reliable switchover and power supply to critical loads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If diodes are used for switchover control in the auxiliary power supply, then the circuit structure is simple, but the voltage drop is large and failure judgment capability is lost
Solution Approach 1:
The patent replaces the mechanical/diode-based switchover control with FETs (Field Effect Transistors) that can be controlled by voltage signals. This substitution enables active control of the switchover mechanism, allowing the system to not only switch power sources but also to detect and judge failures through voltage monitoring at specific nodes, thereby resolving the contradiction between structural simplicity and failure judgment capability.
Solution Approach 2:
The patent implements feedback by monitoring voltages at specific nodes (such as the drain of the first bypass FET and the connection point between FETs) and using this information to judge the status of circuit components. The controller uses voltage threshold comparisons to detect open-circuit or short-circuit failures, creating a closed-loop system that provides both switchover control and failure detection, thus maintaining reliability while managing complexity.
2Reliability
If FETs are used for switchover control, then failure judgment capability is improved, but device complexity increases
Solution Approach 1:
The FETs in the patent serve multiple functions: they act as switchover control elements for power source selection and simultaneously serve as sensing elements for failure detection. By making the FETs multi-functional, the patent reduces the need for separate detection circuits, thereby limiting the increase in overall device complexity while maintaining improved failure judgment capability.
Solution Approach 2:
The circuit uses its own operational parameters (voltage drops across FETs during normal operation) for self-diagnosis. The controller monitors voltages that naturally occur during FET operation and uses these to judge component failures, eliminating the need for additional dedicated detection hardware and thus limiting complexity increases.
3Reliability
If bypass FET and main path FET are used, then switchover reliability is improved, but the number of components increases
Solution Approach 1:
Each FET in the circuit is designed to perform multiple roles: the bypass FET serves both as a normal power transmission path and as a failure detection sensor; similarly, the main path FET functions both for power switching and for judging bypass circuit failures. This multi-functionality allows the patent to achieve improved switchover reliability through redundant paths while limiting the increase in component quantity by making existing components work harder.
Data Source
AI summary
In an electrical storage apparatus including an electric storage device connected between a main power supply and a load, a first bypass FET and a bypass diode which are connected in series between the main power supply and the load are provided, and first and second main path FETs connected in series between the electric storage device and the load are provided. A controller judges that the first bypass FET suffers an open-circuit failure if the voltage (Va) of the load is equal to or smaller than the first threshold value Vth1 or if the voltage (Vc) at the connection point between the first bypass FET and the bypass diode is equal to or smaller than the second threshold value Vth2, when the first bypass FET is turned on and the first main path FET and the second main path FET are turned off.


