FIB Thin Sample Fabrication with Peripheral Support
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Solution Overview
Problem
The existing method for fabricating thin samples for semiconductor defect analysis results in a thin film part being formed outside the observation region, leading to a decrease in support strength as the observation region enlarges, compromising the strength of the thin film part within the observation region.
Innovation Solution
A thin-sample-piece fabricating apparatus and method that uses a particle-beam irradiation system to define a treatment region and control the etching process, setting a thin-piece forming region with a surrounding peripheral part, and irradiating the particle beam from a direction intersecting the sample's face to maintain support strength and prevent unwanted thinning in the observation region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If etching treatment is performed from the end part toward the central part of the sample to create a thin film part, then the thin film region can be formed for observation, but the support strength decreases as the observation region is enlarged
Solution Approach 1:
The patent applies local quality by creating distinct regions with different thicknesses: a thin film part for observation and a thicker peripheral part for support. The etching treatment is selectively applied to create this non-uniform thickness distribution, where the thin-piece forming region has reduced thickness for observation purposes while the peripheral part maintains original thickness for structural support.
Solution Approach 2:
The sample is segmented into two functional regions: a thin-piece forming region (observation region) and a peripheral part (support region). This segmentation allows the observation region to be enlarged for better analysis while the peripheral part provides continuous support, resolving the contradiction between observation area and support strength.
2Area of stationary object
If the thin film part is enlarged to increase the observation region, then more defect analysis area is available, but the strength of the thin film part may be decreased
Solution Approach 1:
The patent creates a local quality difference between the thin-piece forming region and the peripheral part. The thin-piece forming region is selectively etched to achieve optimal thickness for observation, while the peripheral part retains greater thickness to provide mechanical support and prevent thin film part failure, even as the observation area is enlarged.
Solution Approach 2:
The etching treatment is performed in a controlled sequence, creating the thin film structure before final observation. The computer controls the particle beam irradiation to first establish the thin-piece forming region with appropriate thickness, ensuring structural integrity is maintained throughout the process while maximizing the observation area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases the support strength of the thin-sample-piece forming region by ensuring the peripheral part provides adequate support, allowing for precise etching treatment parallel to the sample's face, thus preventing defects like bending and maintaining desired strength even as the thin-piece forming region is enlarged.
Implementation Method 1
fabricate a thin sample by etching a sample via sputtering
Data Source
AI summary
A thin-sample-piece fabricating device is provided with a focused-ion-beam irradiation optical system, a stage, a stage driving mechanism, and a computer. The focused-ion-beam irradiation optical system performs irradiation with a focused ion beam (FIB). The stage holds a sample piece (Q). The stage driving mechanism drives the stage. The computer sets a thin-piece forming region serving as a treatment region, as well as a peripheral section surrounding the entire periphery of the thin-piece forming region, on the sample piece (Q). The computer causes irradiation with the focused ion beam (FIB) from a direction crossing the irradiated face of the sample piece (Q) so as to perform etching treatment such that the thickness of the thin-piece forming region becomes less than the thickness of the peripheral section.