Fiber-Free Insulating Layer for Semiconductor Miniaturization
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Solution Overview
Problem
Conventional semiconductor devices with reinforced fiber insulating material layers face challenges in miniaturization due to difficulties in thinning the insulating material and miniaturizing metal vias and thin-film wires, leading to limitations in reducing device size and thickness.
Innovation Solution
A semiconductor device with an insulating material layer containing no reinforced fibers, featuring metal thin-film wiring layers and vias, and a warpage adjustment layer made of insulating resin to offset warpage, allowing for reduced warpage and miniaturization without a support plate or prepreg.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If prepreg with reinforced fibers is used as insulating material layer, then warpage prevention and strength enhancement are achieved, but device thickness and size cannot be reduced
Solution Approach 1:
The invention extracts and removes the reinforced fiber component from the insulating material layer, using only the resin matrix material. This extraction eliminates the thickness contribution of fiber reinforcement while maintaining the structural integrity and warpage prevention functions through alternative design approaches.
Solution Approach 2:
The invention changes the material composition parameter of the insulating layer by eliminating reinforced fibers and using only resin material. This parameter change enables thickness reduction while maintaining sufficient mechanical strength and warpage control through optimized resin formulation and layer design.
2Reliability
If prepreg with reinforced fibers is used, then manufacturing stability is improved, but metal via and thin-film wire miniaturization is hindered
Solution Approach 1:
The invention removes the reinforced fiber structure that interferes with via formation and thin-film wiring. By using only resin material, the insulating layer provides a uniform, fiber-free substrate that enables precise via drilling and thin-film wire deposition without fiber interference.
Solution Approach 2:
The invention creates a locally optimized insulating material composition that is fiber-free in the regions requiring high precision processing (via holes and thin-film wires), while maintaining overall structural stability through the resin matrix. This local quality change enables miniaturization in critical areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables miniaturization of metal thin-film wiring layers, reduction in via diameter, and interlayer thickness, enhancing electrical characteristics and impact resistance while reducing the risk of short circuits and warpage.
Implementation Method 1
warpage of the insulating material layer to be offset by warpage of the warpage adjustment layer
Data Source
AI summary
A semiconductor device in which an insulating material layer contains no reinforced fibers such as a glass cloth or a nonwoven cloth and which enables miniaturization of metal thin-film wiring layers, a reduction in the diameter of metal vias, and a reduction in interlayer thickness. The semiconductor device includes an insulating material layer including one or more semiconductor elements sealed with an insulating material containing no reinforced fibers, a plurality of metal thin-film wiring layers, metal vias that electrically connect the metal thin-film wiring layers together and electrodes of the semiconductor elements and the metal thin-film wiring layers together, and a warpage adjustment layer arranged on one principal surface of the insulating material layer to offset warpage of the insulating material layer to reduce warpage of the semiconductor device.