Field Doping in Trench Guard Bands for Voltage Stability
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Solution Overview
Problem
The integration of two-dimensional semiconductor devices is limited by the need for expensive processing equipment to achieve fine patterns, and three-dimensional semiconductor memory devices are needed to overcome this limitation.
Innovation Solution
A semiconductor device with a device isolation layer, guard band, and dummy transistors, along with pass transistors and wiring lines, is designed to enhance reliability and connectivity, using field doping regions and interlayer dielectric layers to improve electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If two-dimensional or planar semiconductor devices are highly integrated to meet high performance and low manufacturing cost requirements, then data storage capacity increases, but the integration is limited by expensive processing equipment needed for fine pattern formation
Solution Approach 1:
The patent transitions from two-dimensional planar semiconductor devices to three-dimensionally arranged memory cells, stacking multiple layers vertically to achieve higher integration density without requiring proportionally finer lateral patterns, thereby reducing dependence on expensive lithography equipment
2Quantity of substance
If three-dimensional semiconductor memory devices are implemented to overcome integration limitations, then data storage capacity increases without proportionally increasing pattern fineness requirements, but device complexity and manufacturing process complexity increase
Solution Approach 1:
The three-dimensional memory structure is divided into multiple stacked layers with distinct functional regions (memory cell layers, selector layers, contact layers), allowing each layer to be optimized independently while maintaining overall system functionality and manageability
Solution Approach 2:
Multiple functional layers are stacked and nested vertically, with lower layers supporting upper layers, creating a compact three-dimensional structure where memory cells, selectors, and interconnects are integrated in a hierarchical arrangement
3Reliability
If guard bands are added to improve reliability and reduce impact on breakdown voltages and threshold voltages of pass transistors, then device reliability improves, but manufacturing complexity and process steps increase
Solution Approach 1:
The guard band formation process is merged with the existing device isolation layer formation and doping processes, using the same trench etching and fill steps to create both the isolation structures and the guard bands, thereby avoiding additional dedicated process steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the reliability and reduces the impact on breakdown voltages and threshold voltages of pass transistors, improving the integration and performance of semiconductor devices.
Implementation Method 1
A field doping region is provided, which includes impurities in the substrate; the field doping region may overlap the device isolation layer
Data Source
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AI summary
A semiconductor device includes a substrate having at least one device isolation layer embedded therein, which defines a dummy active pattern and a plurality of active patterns in the substrate. A guard band extends in the substrate and surrounds the dummy active pattern and the plurality of active patterns. A dummy transistor has a plurality of dummy source/drain regions in the dummy active pattern, and a plurality of pass transistors have source/drain regions in the plurality of active patterns. Dummy wiring lines are provided, which electrically connect the guard band to the dummy source/drain regions of the dummy transistor. A field doping region, which at least partially overlaps with the device isolation layer, has an impurity therein that extends into the substrate.