Field Effect Semiconductor Switch With Insulated Segmented Regions
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Solution Overview
Problem
The miniaturization of field effect transistors is limited by the diffusion of dopants and the formation of space charge regions, which increases leakage current and reduces the effective gate length, making it difficult to further reduce the distance between source and drain regions, thereby affecting the performance of memory cells in integrated circuits.
Innovation Solution
A field effect semiconductor switch is created by insulating two semiconductor regions with a thin layer and adding a semiconductor strip that overlaps these regions, allowing for independent control of conductivity through a gate, which can be fully depleted to achieve high source-drain resistance and low leakage current, regardless of dopant diffusion or space charge zones.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the distance between source and drain regions is reduced to enable further miniaturization, then the device size is reduced, but the effective gate length decreases due to dopant diffusion and space charge region formation, increasing leakage current
Solution Approach 1:
The channel region is divided into two separate semiconductor regions that are electrically insulated from each other by an insulating layer. This segmentation prevents the formation of a continuous space charge region and blocks dopant diffusion between source and drain, thereby maintaining low leakage current even when the overall device dimensions are reduced.
Solution Approach 2:
An insulating layer is introduced as an intermediary between the source and drain semiconductor regions. This insulating layer acts as a barrier that prevents direct electrical interaction between the regions, blocking the harmful effects of dopant diffusion and space charge region formation while allowing the device to be miniaturized.
2Manufacturing precision
If halo implantations are used to prevent dopant diffusion and space charge region formation, then the effective gate length is maintained, but the manufacturing process becomes more complex with additional method steps
Solution Approach 1:
The harmful effects of dopant diffusion and space charge region formation are eliminated by extracting the intermediate semiconductor material between source and drain regions and replacing it with an insulating layer. This removes the need for complex halo implantation processes while maintaining precise control over the effective gate length.
3Ease of manufacture
If the implantation dose is reduced to simplify manufacturing, then the manufacturing process becomes simpler, but the charge carrier density and electrical conductivity are reduced
Solution Approach 1:
An insulating layer is introduced as an intermediary between the source and drain semiconductor regions. This insulating layer acts as a barrier that prevents direct electrical interaction between the regions, blocking the harmful effects of dopant diffusion and space charge region formation while allowing the device to be miniaturized.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design allows for freely chosen lateral dimensions, minimizing leakage current and maximizing source-drain resistance, making it suitable for use as a selection transistor in memory components without the need for additional method steps or reduced implantation doses, thus enabling further miniaturization and reducing power and thermal demands.
Implementation Method 1
The electrical conductivities both of the channel region and of the semiconductor strip are switchable by means of different predetermined voltages or potentials at the gate
Implementation Method 2
electrically insulating from one another two semiconductor regions lying next to one another below a surface of a substrate by means of an insulating layer
Data Source
AI summary
A field effect semiconductor comprises a semiconductor layer having a surface, a first and a second semiconductor region in the semiconductor layer, which are arranged next to one another at the surface of the semiconductor layer, an insulating layer between the first semiconductor region and the second semiconductor region, a semiconductor strip on the surface of the semiconductor layer, which semiconductor strip overlaps the first semiconductor region and the second semiconductor region and adjoins these. A gate overlaps the semiconductor strip at least in the region of the insulating layer. A gate dielectric insulates the gate from the semiconductor strip the first semiconductor region and the second semiconductor region. The semiconductor strip and the gate being formed such that the semiconductor strip is electrically insulating at a first predetermined gate voltage and is electrically conductive at a second predetermined gate voltagero.