Field Plate Holder Structure for High-Breakdown Semiconductor Devices
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Solution Overview
Problem
As semiconductor circuits are adapted for high voltage applications, the downscaling of semiconductor devices leads to decreasing voltage performance, necessitating a new semiconductor device design to enhance breakdown voltage capability.
Innovation Solution
The introduction of a field plate holder to accommodate a field plate, which prevents over-etching and controls the depth of the field plate, thereby enhancing the breakdown voltage capability of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If semiconductor devices are downscaled for high voltage applications, then device size is reduced, but voltage performance and breakdown voltage capability deteriorate
Solution Approach 1:
The device structure is segmented into distinct regions including a first field plate holder, a second field plate holder, and an intermediate region between them. This segmentation allows each region to be optimized independently for voltage handling while maintaining compact overall device dimensions, thereby resolving the contradiction between downsizing and maintaining voltage performance
Solution Approach 2:
The patent introduces field plate holders that extend in the vertical dimension rather than only lateral scaling. By adding vertical field control structures (field plate holders at different heights), the device achieves enhanced voltage performance without increasing lateral footprint, thus maintaining small device size while improving breakdown voltage capability
2Manufacturing precision
If etching is used to form field plate structures, then field plate depth can be controlled, but over-etching may occur causing electrical leakage
Solution Approach 1:
The patent employs an etch stop layer positioned beneath the field plate holder that prevents over-etching during the field plate formation process. This preliminary protective structure ensures that the etching process stops at the correct depth, maintaining manufacturing precision while preventing electrical leakage that would occur if etching penetrated too deeply
Solution Approach 2:
The etch stop layer acts as an intermediary element between the field plate holder and the underlying substrate. It mediates the etching process by providing a controlled termination point, allowing precise depth control of the field plate while preventing harmful over-etching that could cause electrical leakage pathways
Data Source
AI summary
A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, a gate electrode, a source/drain feature, an interlayer dielectric (ILD), a first field plate holder, and a first field plate. The gate electrode is disposed on the substrate. The source/drain feature is disposed within the substrate and defines a drift region within the substrate. The ILD covers the gate electrode and the substrate. The first field plate holder penetrates the ILD and is disposed over the drift region. The first field plate is disposed on the first field plate holder.