Field Plate Structure for High Breakdown Voltage in Nitride Devices
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Solution Overview
Problem
Existing high-frequency and high-power electronic devices using nitride-based compound semiconductors face challenges in achieving high breakdown voltage due to high electric field peaks at the edge of the gate electrode, which can damage the semiconductor layers and reduce reliability.
Innovation Solution
The electronic device incorporates a field plate with a stepped structure that connects to the source electrode and extends towards the drain electrode, reducing the electric field peak at the gate electrode edge by maintaining a distance of 0.5 μm to 5 μm and forming an angle between 20° to 90°, thereby increasing the breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional gate electrode structure is used, then the device structure is simple, but the electric field peak at the gate electrode edge is high which reduces breakdown voltage
Solution Approach 1:
A field plate is introduced as an intermediary component between the gate electrode and the drain electrode. This field plate extends from the gate electrode toward the drain electrode and becomes farther away from the substrate as it approaches the drain, serving as a mediator to distribute and reduce the electric field peak at the gate electrode edge, thereby improving breakdown voltage without fundamentally changing the gate electrode structure itself
2Reliability
If the field plate extends close to the drain electrode, then the electric field distribution is improved, but the distance between field plate and substrate increases which may affect device performance
Solution Approach 1:
The field plate is designed with a three-dimensional configuration that extends in the horizontal direction toward the drain electrode while simultaneously rising in the vertical direction away from the substrate. This dimensional approach allows the field plate to achieve effective electric field distribution near the drain electrode without maintaining a large vertical distance from the substrate throughout its entire length, thus balancing electric field control with device compactness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the electric field strength at the gate electrode edge, enhancing the breakdown voltage and improving the reliability of the electronic device by preventing damage to the semiconductor layers.
Implementation Method 1
a high electric field peak on an edge portion of a gate electrode should be minimized
Data Source
AI summary
Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.